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Professor William Gillin

William

Professor of Experimental Physics

Email: w.gillin@qmul.ac.uk
Telephone: 020 7882 5798
Room Number: G.O. Jones Building, Room 121

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Research

Research Interests:

My research interests

William Gillin works primarily on the electrical and optical properties of organic materials. He currently has two main areas of research. Organic optical amplifiers based on lanthanide containing molecules and organic spintronics.

Lanthanide ions, such as erbium, are widely used in optical amplifiers and lasers due to their long intrinsic lifetime which makes population inversion possible. However, this same property means that they are very poor at absorbing light so powerful pump sources, such as lasers, are required to make optical amplifiers work. By incorporating the ion into an organic host it is possible to excite the organic directly and then transfer the energy directly to the lanthanide ion; this is called sensitization. Using this approach it may be possible to replace the high power pump laser with low cost LEDs. We have developed novel fluorinated organic molecules that allow us to produce materials where the quantum efficiency of the erbium ions is >50% and which exhibit sensitization of a factor of >10000. Using this approach we have demonstrated population inversion for the erbium ions in an organic layer deposited onto silicon when optically pumped from a low power (~3mW) light source. This opens the possibility of building optical amplifiers and lasers directly onto silicon substrates.

Organic spintronics is the control and manipulation of electronic spin on individual organic molecules within an organic electronic device. This technology can, for example, be used to produce devices that are highly sensitive to weak magnetic fields. We have a programme that works on producing organic spinvalves and understanding spin injection and extraction in these devices and the role of interfacial layers on controlling those processes. We also work on understanding the spin interactions that occur within devices such as organic light emitting diodes and organic photovoltaic cells. Controlling these processes is vital to improving device performance as many of the quenching mechanisms are highly spin dependent.

Examples of research funding:

Centre for Advanced Materials for Integrated Energy Systems, EPSRC, 2016-2020, £2.1M

Silicon Photonics for Future Systems, W.P. Gillin, EPSRC, 2015-16, £49K

Overseas Travel Grant, W.P. Gillin, EPSRC, 2014-16, £71K

Organic optical Interconnects, W.P. Gillin, Proof of Concept fund, 2013-14, £50K

Next Generation Hybrid Interfaces for Spintronic Applications (HINTS), A.J. Drew and W.P. Gillin, EU, (QMUL £301K), 2011-14, €3.87M.

Controlling spin injection interfaces in organic spinvalves, W.P. Gillin, Royal Academy of Engineering Research Exchange, 2012-13, £8K.

EPSRC, Global Engagement: Growing sustainable research collaborations with China, J. Kilburn, W.P. Gillin, L. Cuthbert, X. Chen, S. Uhlig, A. Cavallaro, E. Welch, 2012-13, £500K.

EPSRC KTA, A low cost replacement for indium tin oxide for smartphone displays, W.P. Gillin, 2011-12, £90K.

Publications

2017

Sensitization, energy transfer and infra-red emission decay modulation in Yb3+-doped NaYF4 nanoparticles with visible light through a perfluoroanthraquinone chromophore
Lu H, Peng Y, Ye HQ et al.
Scientific Reports, Volume 7, 11th July 2017.
DOI: 10.1038/s41598-017-05350-9

Carbon Nanotube-Quantum Dot Nanohybrids: Coupling with Single Particle Control in Aqueous Solution
Attanzio A, Sapelkin A, Gesuele F et al.
Small, 10th February 2017.
DOI: 10.1002/smll.201603042

2016

Functionalisation of ligands through click chemistry: long-lived NIR emission from organic Er(III) complexes with a perfluorinated core and a hydrogen-containing shell
GILLIN WP, wyatt PB, Hernandez I et al.
RSC Advances, 22nd December 2016.
DOI: 10.1039/c6ra25494b

Impurity effects on charge transport and magnetoconductance in a single layer poly(3-hexyl-thiophene) device
Gu H, Chang S, Lu H et al.
Applied Physics Letters, Volume 108, issue 20, page 203301, 16th May 2016.
DOI: 10.1063/1.4950859

Solution-Processable Carbon Nanoelectrodes for Single-Molecule Investigations.
Zhu J, McMorrow J, Crespo-Otero R et al.
J Am Chem Soc, Volume 138, issue 9, page 2905, 9th March 2016.
DOI: 10.1021/jacs.5b12086

Hole-exciton interaction induced high field decay of magneto-electroluminescence in Alq3-based organic light-emitting diodes at room temperature
GILLIN WP, Zhang T, holford DF et al.
Applied Physics Letters, Volume 108, 13th January 2016.
DOI: 10.1063/1.4939871

2015

Synthesis, Characterization and Application of Core-Shell Co0.16Fe2.84O4@NaYF4(Yb, Er) and Fe3O4@NaYF4(Yb, Tm) Nanoparticle as Tri-modal (MRI, PET/SPECT and Optical) Imaging Agents
Cui X, Mathe D, Kovacs N et al.
Bioconjugate Chemistry, Volume 27, issue 2, page 319, 14th July 2015.
DOI: 10.1021/acs.bioconjchem.5b00338

Annealing and doping-dependent magnetoresistance in single layer poly(3-hexyl-thiophene) organic semiconductor device
Gu H, Chang S, Holford D et al.
Organic Electronics: physics, materials, applications, Volume 17, page 51, 1st January 2015.
DOI: 10.1016/j.orgel.2014.11.019

Field-induced single-ion magnetic behaviour in a highly luminescent Er<sup>3+</sup> complex
Coutinho JT, Pereira LCJ, Martín-Ramos P et al.
Materials Chemistry and Physics, Volume 160, page 429, 1st January 2015.
DOI: 10.1016/j.matchemphys.2015.04.059

Organic Chromophores-Based Sensitization of NIR-Emitting Lanthanides: Toward Highly Efficient Halogenated Environments
Hernández I, Gillin WP
Volume 47, page 1, 1st January 2015.
DOI: 10.1016/B978-0-444-63481-8.00269-4

2014

Ferromagnetic-organic interfacial states and their role on low voltage current injection in tris-8-hydroxyquinloline (Alq 3 ) organic spin valves
Zhang HT, Han S, Desai P et al.
Applied Physics Letters, Volume 105, issue 20, 17th November 2014.
DOI: 10.1063/1.4902539

Concentration dependence of the up- and down-conversion emission colours of Er(3+)-doped Y2O3: a time-resolved spectroscopy analysis.
Lu H, Gillin WP, Hernández I
Phys Chem Chem Phys, Volume 16, issue 38, page 20957, 14th October 2014.
DOI: 10.1039/c4cp02028f

Field-induced single-ion magnetic behaviour in a highly luminescent Er3+ complex
Coutinho JT, Pereira LCJ, Martín-Ramos P et al.
Materials Chemistry and Physics, 2nd September 2014.
DOI: 10.1016/j.matchemphys.2015.04.059

The transition from bipolaron to triplet-polaron magnetoresistance in a single layer organic semiconductor device
Gu H, Kreouzis T, Gillin WP
ORGANIC ELECTRONICS, Volume 15, issue 8, page 1711, 1st August 2014.
DOI: 10.1016/j.orgel.2014.04.036

Visible-Range Sensitization of Er3+-Based Infrared Emission from Perfluorinated 2-Acylphenoxide Complexes
Peng Y, Ye H, Li Z et al.
J. Phys. Chem. Lett., Volume 5, issue 9, page 1560, 14th April 2014.
DOI: 10.1021/jz500519e

Electronic and magnetic properties of the interface between metal-quinoline molecules and cobalt
Droghetti A, Steil S, Grossmann N et al.
PHYSICAL REVIEW B, Volume 89, issue 9, 12th March 2014.
DOI: 10.1103/PhysRevB.89.094412

Understanding the role of electron and hole trions on current transport in aluminium tris(8-hydroxyquinoline) using organic magnetoresistance
Zhang S, Willis M, Gotto R et al.
APPLIED PHYSICS LETTERS, Volume 104, issue 4, 27th January 2014.
DOI: 10.1063/1.4863684

The importance of holes in aluminium tris-8-hydroxyquinoline (Alq(3)) devices with Fe and NiFe contacts
Zhang H, Desai P, Zhan YQ et al.
APPLIED PHYSICS LETTERS, Volume 104, issue 1, 6th January 2014.
DOI: 10.1063/1.4861120

An organic multilevel non-volatile memory device based on multiple independent switching modes
You Y, Yang K, Yuan S et al.
Organic Electronics: physics, materials, applications, Volume 15, issue 9, page 1983, 1st January 2014.
DOI: 10.1016/j.orgel.2014.05.032

Organo-erbium systems for optical amplification at telecommunications wavelengths
Ye HQ, Li Z, Peng Y et al.
Nature Materials, Volume 13, issue April 2014, page 382, 1st January 2014.
DOI: 10.1038/NMAT3910

2013

Effect of Fluorination on the Radiative Properties of Er3+ Organic Complexes: An Opto-Structural Correlation Study
Ye H, Peng Y, Li Z et al.
J Phys Chem C, Volume 117, issue 45, page 23970, 15th October 2013.
DOI: 10.1021/jp4093282

Low temperature magnetic field effects on the efficiency of aluminium tris(8-hydroxyquinoline) based organic light emitting diodes in the absence of magnetoresistance
Zhang S, Kreouzis T, Gillin WP
SYNTHETIC METALS, Volume 173, page 46, 1st June 2013.
DOI: 10.1016/j.synthmet.2012.11.016

Special issue: Spins in Organic Semiconductors 2012
Gillin W, Morley N
SYNTHETIC METALS, Volume 173, page 1, 1st June 2013.
DOI: 10.1016/j.synthmet.2013.03.001

Influence of anneal atmosphere on ZnO-nanorod photoluminescent and morphological properties with self-powered photodetector performance
Hatch SM, Briscoe J, Sapelkin A et al.
J. Appl. Phys., Volume 113, issue 20, page 204501, 28th May 2013.
DOI: 10.1063/1.4805349

Importance of spin-orbit interaction for the electron spin relaxation in organic semiconductors.
Nuccio L, Willis M, Schulz L et al.
Phys Rev Lett, Volume 110, issue 21, page 216602, 24th May 2013.
DOI: 10.1103/PhysRevLett.110.216602

Luminescent zinc(II) complexes of fluorinated benzothiazol-2-yl substituted phenoxide and enolate ligands.
Li Z, Dellali A, Malik J et al.
Inorg Chem, Volume 52, issue 3, page 1379, 4th February 2013.
DOI: 10.1021/ic302063u

A single-device universal logic gate based on a magnetically enhanced memristor.
Prezioso M, Riminucci A, Graziosi P et al.
Adv Mater, Volume 25, issue 4, page 534, 25th January 2013.
DOI: 10.1002/adma.201202031

Efficient sensitized emission in Yb(III) pentachlorotropolonate complexes
Hernández I, Zheng Y-X, Motevalli M et al.
Chemical Communications, Volume 49, issue 19, page 1933, 1st January 2013.
DOI: 10.1039/c3cc38610d

2012

Modeling of positive and negative organic magnetoresistance in organic light-emitting diodes
Zhang S, Rolfe NJ, Desai P et al.
PHYSICAL REVIEW B, Volume 86, issue 7, 17th August 2012.
DOI: 10.1103/PhysRevB.86.075206

Ambipolar charge transport in "traditional" organic hole transport layers.
Khademi S, Song JY, Wyatt PB et al.
Adv Mater, Volume 24, issue 17, page 2278, 2nd May 2012.
DOI: 10.1002/adma.201103830

The role of interfaces in organic spin valves revealed through spectroscopic and transport measurements
Drew AJ, Szulczewski G, Nuccio L et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Volume 249, issue 1, page 9, 1st January 2012.
DOI: 10.1002/pssb.201147157

2011

Importance of intramolecular electron spin relaxation in small molecule semiconductors
Schulz L, Willis M, Nuccio L et al.
PHYS REV B, Volume 84, issue 8, 26th August 2011.
DOI: 10.1103/PhysRevB.84.085209

Efficient white light emission by upconversion in Yb(3+)-, Er(3+)- and Tm(3+)-doped Y2BaZnO5.
Etchart I, Bérard M, Laroche M et al.
Chem Commun (Camb), Volume 47, issue 22, page 6263, 14th June 2011.
DOI: 10.1039/c1cc11427a

Modelling of organic magnetoresistance as a function of temperature using the triplet polaron interaction
Zhang SJ, Drew AJ, Kreouzis T et al.
SYNTHETIC METALS, Volume 161, issue 7-8, page 628, 1st April 2011.
DOI: 10.1016/j.synthmet.2010.11.027

The effect of deuteration on organic magnetoresistance
Rolfe NJ, Heeney M, Wyatt PB et al.
SYNTHETIC METALS, Volume 161, issue 7-8, page 608, 1st April 2011.
DOI: 10.1016/j.synthmet.2010.11.044

Oxide phosphors for light upconversion; Yb3+ and Tm3+ co-doped Y2BaZnO5
Etchart I, Hernandez I, Huignard A et al.
J APPL PHYS, Volume 109, issue 6, 15th March 2011.
DOI: 10.1063/1.3549634

Engineering spin propagation across a hybrid organic/inorganic interface using a polar layer.
Schulz L, Nuccio L, Willis M et al.
Nat Mater, Volume 10, issue 3, page 252, 1st March 2011.
DOI: 10.1038/nmat2962

Structural and Electrical Characterization of ZnO Films Grown by Spray Pyrolysis and Their Application in Thin-Film Transistors
Adamopoulos G, Bashir A, Gillin WP et al.
ADV FUNCT MATER, Volume 21, issue 3, page 525, 8th February 2011.
DOI: 10.1002/adfm.201001089

Efficient oxide phosphors for light upconversion; green emission from Yb3+ and Ho3+ co-doped Ln(2)BaZnO(5) (Ln = Y, Gd)
Etchart I, Hernandez I, Huignard A et al.
J MATER CHEM, Volume 21, issue 5, page 1387, 1st January 2011.
DOI: 10.1039/c0jm01652g

Engineering spin propagation across a hybrid organic/inorganic interface using a polar layer.
Schulz L, Nuccio L, Willis M et al.
Nat Mater, Volume 10, issue 1, page 39, 1st January 2011.
DOI: 10.1038/nmat2912

2010

Cooperative infrared to visible up conversion in Tb3+, Eu3+, And Yb3+ containing polymers.
Hernández I, Pathumakanthar N, Wyatt PB et al.
Adv Mater, Volume 22, issue 47, page 5356, 14th December 2010.
DOI: 10.1002/adma.201002674

Determining the influence of excited states on current transport in organic light emitting diodes using magnetic field perturbation
Gillin WP, Zhang SJ, Rolfe NJ et al.
PHYS REV B, Volume 82, issue 19, 23rd November 2010.
DOI: 10.1103/PhysRevB.82.195208

Spray-deposited Li-doped ZnO transistors with electron mobility exceeding 50 cm²/Vs.
Adamopoulos G, Bashir A, Thomas S et al.
Adv Mater, Volume 22, issue 42, page 4764, 9th November 2010.
DOI: 10.1002/adma.201001444

Effect of excited states and applied magnetic fields on the measured hole mobility in an organic semiconductor
Song JY, Stingelin N, Drew AJ et al.
PHYS REV B, Volume 82, issue 8, 20th August 2010.
DOI: 10.1103/PhysRevB.82.085205

The Effect of Injection Layers on a Room Temperature Organic Spin Valve
Dhandapani D, Morley NA, Gibbs MRJ et al.
IEEE T MAGN, Volume 46, issue 6, page 1307, 1st June 2010.
DOI: 10.1109/TMAG.2010.2043818

High-pressure study of non-radiative de-excitation mechanisms in perfluorinated organic erbium(III) phosphinates
Hernandez I, Tan RHC, Wyatt PB et al.
INTERNATIONAL CONFERENCE ON HIGH PRESSURE SCIENCE AND TECHNOLOGY, JOINT AIRAPT-22 AND HPCJ-50, Volume 215, 1st January 2010.
DOI: 10.1088/1742-6596/215/1/012042

Oxide phosphors for efficient light upconversion: Yb3+ and Er3+ co-doped Ln(2)BaZnO(5) (Ln = Y, Gd)
Etchart I, Huignard A, Berard M et al.
J MATER CHEM, Volume 20, issue 19, page 3989, 1st January 2010.
DOI: 10.1039/c000127a

2009

Elucidating the role of hyperfine interactions on organic magnetoresistance using deuterated aluminium tris(8-hydroxyquinoline)
Rolfe NJ, Heeney M, Wyatt PB et al.
PHYS REV B, Volume 80, issue 24, 1st December 2009.
DOI: 10.1103/PhysRevB.80.241201

Spectroscopic study of Mq(3) (M = Al, Ga, In, q=8-hydroxyquinolinate) at high pressure
Hernandez I, Gillin WP, Somerton M
JOURNAL OF LUMINESCENCE, Volume 129, issue 12, page 1835, 1st December 2009.
DOI: 10.1016/j.jlumin.2009.02.030

Influence of high hydrostatic pressure on Alq3, Gaq3, and Inq3 (q = 8-hydroxyquinoline).
Hernández I, Gillin WP
J Phys Chem B, Volume 113, issue 43, page 14079, 29th October 2009.
DOI: 10.1021/jp905108x

Measurement of the intersystem crossing rate in aluminum tris(8-hydroxyquinoline) and its modulation by an applied magnetic field
Zhang SJ, Song JY, Kreouzis T et al.
J APPL PHYS, Volume 106, issue 4, 15th August 2009.
DOI: 10.1063/1.3204015

Erbium bis(pentafluorophenyl)phosphinate: a new hybrid material with unusually long-lived infrared luminescence (vol 20, pg S430, 2009)
Zheng Y, Pearson J, Tan RHC et al.
J MATER SCI-MATER EL, Volume 20, issue 8, page 788, 1st August 2009.
DOI: 10.1007/s10854-009-9915-2

Nonradiative de-excitation mechanisms in long-lived erbium(III) organic compounds ErxY1-x[(p-CF3-C6F4)2PO2]3.
Hernández I, Tan RHC, Pearson JM et al.
J Phys Chem B, Volume 113, issue 21, page 7474, 28th May 2009.
DOI: 10.1021/jp810932s

Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation
Drew AJ, Hoppler J, Schulz L et al.
NAT MATER, Volume 8, issue 2, page 109, 1st February 2009.
DOI: 10.1038/NMAT2333

Erbium bis(pentafluorophenyl) phosphinate: a new hybrid material with unusually long-lived infrared luminescence
Zheng Y, Pearson J, Tan RHC et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Volume 20, page 430, 1st January 2009.
DOI: 10.1007/s10854-008-9662-9

2008

Reduced hole mobility due to the presence of excited states in poly-(3-hexylthiophene)
Song JY, Stingelin N, Gillin WP et al.
APPL PHYS LETT, Volume 93, issue 23, 8th December 2008.
DOI: 10.1063/1.3049129

The effect of applied magnetic field on photocurrent generation in poly-3-hexylthiophene:[6,6]-phenyl C61-butyric acid methyl ester photovoltaic devices
Shakya P, Desai P, Kreouzis T et al.
JOURNAL OF PHYSICS-CONDENSED MATTER, Volume 20, issue 45, 12th November 2008.
DOI: 10.1088/0953-8984/20/45/452203

Separating the roles of electrons and holes in the organic magnetoresistance of aluminum tris(8-hydroxyquinoline) organic light emitting diodes
Rolfe N, Desai P, Shakya P et al.
J APPL PHYS, Volume 104, issue 8, 15th October 2008.
DOI: 10.1063/1.3000454

The magnetic field effect on the transport and efficiency of group III tris(8-hydroxyquinoline) organic light emitting diodes
Shakya P, Desai P, Somerton M et al.
J APPL PHYS, Volume 103, issue 10, 15th May 2008.
DOI: 10.1063/1.2932079

Improved electron injection into Alq(3) based devices using a thin Erq(3) injection layer
Shakya P, Desai P, Curry RJ et al.
J PHYS D APPL PHYS, Volume 41, issue 8, 21st April 2008.
DOI: 10.1088/0022-3727/41/8/085108

Near IR luminescent rare earth 3,4,5,6-tetrafluoro-2-nitrophenoxide complexes: Synthesis, X-ray crystallography and spectroscopy
Zheng YX, Motevalli M, Tan RHC et al.
POLYHEDRON, Volume 27, issue 5, page 1503, 7th April 2008.
DOI: 10.1016/j.poly.2008.01.022

Intrinsic mobility limit for anisotropic electron transport in Alq(3)
Drew AJ, Pratt FL, Hoppler J et al.
PHYS REV LETT, Volume 100, issue 11, 21st March 2008.
DOI: 10.1103/PhysRevLett.100.116601

Evidence for erbium-erbium energy migration in erbium(III) bis(perfluoro-p-tolyl)phosphinate
Tan RHC, Pearson JM, Zheng Y et al.
APPL PHYS LETT, Volume 92, issue 10, 10th March 2008.
DOI: 10.1063/1.2896105

Magnetoresistance in triphenyl-diamine derivative blue organic light emitting devices
Shakya P, Desai P, Kreouzis T et al.
J APPL PHYS, Volume 103, issue 4, 15th February 2008.
DOI: 10.1063/1.2885097

Separating the roles of electrons and holes in the organic magnetoresistance of aluminum tris(8-hydroxyquinoline) organic light emitting diodes
Rolfe N, Desai P, Shakya P et al.
JOURNAL OF APPLIED PHYSICS, Volume 104, 1st January 2008.
DOI: 10.1063/1.3000454

2007

Magnetoresistance in organic light-emitting diode structures under illumination
Desai P, Shakya P, Kreouzis T et al.
PHYS REV B, Volume 76, issue 23, 1st December 2007.
DOI: 10.1103/PhysRevB.76.235202

The role of magnetic fields on the transport and efficiency of aluminum tris(8-hydroxyquinoline) based organic light emitting diodes
Desai P, Shakya P, Kreouzis T et al.
J APPL PHYS, Volume 102, issue 7, 1st October 2007.
DOI: 10.1063/1.2787158

Near-infrared photoluminescence of erbium tris(8-hydroxyquinoline) spin-coated thin films induced by low coherence light sources
Penna S, Reale A, Pizzoferrato R et al.
APPL PHYS LETT, Volume 91, issue 2, 9th July 2007.
DOI: 10.1063/1.2755933

Magnetoresistance and efficiency measurements of Alq(3)-based OLEDs
Desai P, Shakya P, Kreouzis T et al.
PHYS REV B, Volume 75, issue 9, 1st March 2007.
DOI: 10.1103/PhysRevB.75.094423

Magnetoresistance and efficiency measurements of Alq3-based OLEDs
GILLIN WP
Phys. Rev. B, Volume 75, page 094423, 1st February 2007.
DOI: 10.1103/PhysRevB.75.094423

Characterization of interdiffusion around miscibility gap of lattice matched InGaAs/InP quantum wells by high resolution x-ray diffraction
Bollet F, Gillin WP
J APPL PHYS, Volume 101, issue 1, 1st January 2007.
DOI: 10.1063/1.2404784

Novel infrared emitter for low cost optical devices
Penna S, Reale A, Pizzoferrato R et al.
ICTON 2007: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 1, page 208, 1st January 2007.
DOI: 10.1109/ICTON.2007.4296069

2006

Quenching of IR luminescence of erbium, neodymium, and ytterbium beta-diketonate complexes by ligand C-H and C-D bonds
Tan RHC, Motevalli M, Abrahams I et al.
J PHYS CHEM B, Volume 110, issue 48, page 24476, 7th December 2006.
DOI: 10.1021/jp0654462

Quenching of IR Luminescence of Erbium, Neodymium, and Ytterbium alpha-Diketonate Complexes by Ligand C-H and C-D Bonds
Wyatt P, Abrahams I, GILLIN WP et al.
Journal of Physical Chemistry B, Volume 110, issue 48, page 24476, 1st December 2006.
DOI: 10.1021/jp0654462

Quenching of Er(III) luminescence by ligand C-H vibrations: Implications for the use of erbium complexes in telecommunications
Winkless L, Tan RHC, Zheng Y et al.
APPL PHYS LETT, Volume 89, issue 11, 11th September 2006.
DOI: 10.1063/1.2345909

Photoluminescence relaxation kinetics in vapor etched porous silicon - art. no. 63441A
Karavanskii V, Gillin W, Sapelkin A et al.
Advanced Laser Technologies 2005, Pts 1 and 2, Volume 6344, page A3441, 1st January 2006.
DOI: 10.1117/12.694292

2005

Measurement of the size effect in the yield strength of nickel foils
Moreau P, Raulic M, P'ng KMY et al.
PHIL MAG LETT, Volume 85, issue 7, page 339, 1st July 2005.
DOI: 10.1080/09500830500071564

Concentration dependent interdiffusion in InGaAs/GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy
Bollet F, Gillin WP, Hopkinson M et al.
J APPL PHYS, Volume 97, issue 1, 1st January 2005.
DOI: 10.1063/1.1825613

2004

Time-resolved photoluminescence excitation characterisation of lanthanide and group III tris-(8-hydroxyquinoline) molecules
Desai P, Somerton M, Curry RJ et al.
IEICE T ELECTRON, Volume E87C, issue 12, page 2023, 1st December 2004.

Electrolummescence from (5)Do -> F-7(J) and D-5(1) -> F-7(J) (J=0-4) transitions with a europium complex as emitter
Zheng YX, Zhou YH, Yu JB et al.
J PHYS D APPL PHYS, Volume 37, issue 4, page 531, 21st February 2004.
DOI: 10.1088/0022-3727/37/4/004

2003

III-V semiconductors solve mechanical riddle
Dunstan D, BUSHBY AJ, Gillin W
III-Vs Review, Volume 16, issue 9, page 39, 1st December 2003.
DOI: 10.1016/S0961-1290(03)00084-X

Photoluminescence and x-ray diffraction studies of the diffusion behavior of lattice matched InGaAs/InP heterostructures
Bollet F, Gillin WP
J APPL PHYS, Volume 94, issue 2, page 988, 15th July 2003.
DOI: 10.1063/1.1586975

On the diffusion of lattice matched InGaAs/InP microstructures
Bollet F, Gillin WP, Hopkinson M et al.
J APPL PHYS, Volume 93, issue 7, page 3881, 1st April 2003.
DOI: 10.1063/1.1559002

2002

Morphological study of aluminum tris(8-hydroxyquinoline) thin films using infrared and Raman spectroscopy
Curry RJ, Gillin WP, Clarkson J et al.
J APPL PHYS, Volume 92, issue 4, page 1902, 15th August 2002.
DOI: 10.1063/1.1495527

A new laser pain threshold model detects a faster onset of action from a liquid formulation of 1 g paracetamol than an equivalent tablet formulation
Sutton JA, Gillin WP, Grattan TJ et al.
BRIT J CLIN PHARMACO, Volume 53, issue 1, page 43, 1st January 2002.
DOI: 10.1046/j.0306-5251.2001.01527.x

2001

Electroluminescence of organolanthanide based organic light emitting diodes
Curry RJ, Gillin WP
CURR OPIN SOLID ST M, Volume 5, issue 6, page 481, 1st December 2001.
DOI: 10.1016/S1359-0286(02)00010-4

1.5 mu m electroluminescence from organic light emitting diodes integrated on silicon substrates
Curry RJ, Gillin WP, Knights AP et al.
OPTICAL MATERIALS, Volume 17, issue 1-2, page 161, 1st June 2001.
DOI: 10.1016/S0925-3467(01)00077-5

980 nm electroluminescence from ytterbium tris(8-hydroxyquinoline)
Khreis OM, Gillin WP, Somerton M et al.
Organic Electronics, Volume 2, issue 1, page 45, 1st January 2001.
DOI: 10.1016/S1566-1199(00)00014-8

2000

Silicon-based organic light-emitting diode operating at a wavelength of 1.5 mu m
Curry RJ, Gillin WP, Knights AP et al.
APPLIED PHYSICS LETTERS, Volume 77, issue 15, page 2271, 9th October 2000.
DOI: 10.1063/1.1316064

Infrared organic light emitting diodes using neodymium tris-(8-hydroxyquinoline)
Khreis OM, Curry RJ, Somerton M et al.
JOURNAL OF APPLIED PHYSICS, Volume 88, issue 2, page 777, 15th July 2000.
DOI: 10.1063/1.373803

Radiative recombination mechanisms in aluminum tris(8-hydroxyquinoline): Evidence for triplet exciton recombination
Curry RJ, Gillin WP
JOURNAL OF APPLIED PHYSICS, Volume 88, issue 2, page 781, 15th July 2000.
DOI: 10.1063/1.373802

Infra-red and visible electroluminescence from ErQ based OLEDs
Curry RJ, Gillin WP
SYNTHETIC METALS, Volume 111, page 35, 1st June 2000.
DOI: 10.1016/S0379-6779(99)00433-6

1.5 mu m luminescence from ErQ based organic light emitting diodes
Curry RJ, Gillin WP
FLAT-PANEL DISPLAYS AND SENSORS: PRINCIPLES, MATERIALS AND PROCESSES, Volume 558, page 481, 1st January 2000.

1.5 μm luminescence from ErQ based organic light emitting diodes
Curry RJ, Gillin WP
Materials Research Society Symposium - Proceedings, Volume 558, page 481, 1st January 2000.

Hybrid silicon-organic light emitting diodes for 1.5 mu m optoelectronics
Curry RJ, Gillin WP, Somerton M et al.
ORGANIC LIGHT-EMITTING MATERIALS AND DEVICES IV, Volume 4105, page 265, 1st January 2000.
DOI: 10.1117/12.416903

Organolanthanide based infrared light emitting devices
Gillin WP, Curry RJ
PHOTONICS FOR SPACE ENVIRONMENTS VII, Volume 4134, page 159, 1st January 2000.
DOI: 10.1117/12.405361

The photoluminescence temperature dependence of aluminium tris(8-hydroxyquinoline) as a function of excitation energy
Curry RJ, Gillin WP
FLAT-PANEL DISPLAYS AND SENSORS: PRINCIPLES, MATERIALS AND PROCESSES, Volume 558, page 421, 1st January 2000.

1999

1.5 μm luminescence from ErQ based organic light emitting diodes
Curry RJ, Gillin WP
Materials Research Society Symposium - Proceedings, Volume 561, page 211, 1st December 1999.

1.54 mu m electroluminescence from erbium (III) tris(8-hydroxyquinoline) (ErQ)-based organic light-emitting diodes
Curry RJ, Gillin WP
APPLIED PHYSICS LETTERS, Volume 75, issue 10, page 1380, 6th September 1999.
DOI: 10.1063/1.124700

1.54 μm electroluminescence from erbium (III) tris(8-hydroxyquinoline) (ErQ)-based organic light-emitting diodes
Curry RJ, Gillin WP
Applied Physics Letters, Volume 75, issue 10, page 1380, 6th September 1999.

Erbium (III) tris(8-hydroxyquinoline) (ErQ): A potential material for silicon compatible 1.5 mu m emitters
Gillin WP, Curry RJ
APPLIED PHYSICS LETTERS, Volume 74, issue 6, page 798, 8th February 1999.
DOI: 10.1063/1.123371

Effect of strain on the interdiffusion of InGaAs/GaAs heterostructures
Gillin WP
JOURNAL OF APPLIED PHYSICS, Volume 85, issue 2, page 790, 15th January 1999.
DOI: 10.1063/1.369160

1.5 mu m luminescence from ErQ based organic light emitting diodes
Curry RJ, Gillin WP
ORGANIC NONLINEAR OPTICAL MATERIALS AND DEVICES, Volume 561, page 211, 1st January 1999.

1998

Erbium in silicon-germanium quantum wells
Naveed AT, Huda MQ, Abd El-Rahman KF et al.
Journal of Luminescence, Volume 80, issue 1-4, page 381, 1st December 1998.
DOI: 10.1016/S0022-2313(98)00133-1

Contactless electro-reflectance study of interdiffusion in heat-treated GaAs1-xSbx/GaAs single quantum wells
Ghosh S, Arora BM, Homewood KP et al.
JOURNAL OF PHYSICS-CONDENSED MATTER, Volume 10, issue 43, page 9865, 2nd November 1998.
DOI: 10.1088/0953-8984/10/43/031

Intermixing in GaAsSb/GaAs single quantum wells
Khreis OM, Homewood KP, Gillin WP et al.
JOURNAL OF APPLIED PHYSICS, Volume 84, issue 7, page 4017, 1st October 1998.
DOI: 10.1063/1.368583

Interdiffusion in InGaAs/GaAs: The effect of growth conditions
Khreis OM, Homewood KP, Gillin WP
JOURNAL OF APPLIED PHYSICS, Volume 84, issue 1, page 232, 1st July 1998.
DOI: 10.1063/1.368079

Diffusion in semiconductors
Gillin WP, Dunstan DJ
COMPUTATIONAL MATERIALS SCIENCE, Volume 11, issue 2, page 96, 1st April 1998.
DOI: 10.1016/S0927-0256(97)00199-7

Evidence for non-equilibrium vacancy concentrations controlling interdiffusion in III-V materials
Gillin WP, Khreis OM, Homewood KP
DIFFUSION MECHANISMS IN CRYSTALLINE MATERIALS, Volume 527, page 401, 1st January 1998.

1997

Strong luminescence from erbium in Si/Si1-xGex/Si quantum well structures
Huda MQ, Peaker AR, Evans-Freeman JH et al.
Electron. Letts., Volume 33, page 1182, 31st December 1997.
DOI: 10.1049/el:19970750

The activation energy for GaAs/AlGaAs interdiffusion
Wee SF, Chai MK, Homewood KP et al.
JOURNAL OF APPLIED PHYSICS, Volume 82, issue 10, page 4842, 15th November 1997.
DOI: 10.1063/1.366345

Interdiffusion: A probe of vacancy diffusion in III-V materials
Khreis OM, Gillin WP, Homewood KP
PHYSICAL REVIEW B, Volume 55, issue 23, page 15813, 15th June 1997.
DOI: 10.1103/PhysRevB.55.15813

The Fermi level effect in III-V intermixing: The final nail in the coffin?
Jafri ZH, Gillin WP
JOURNAL OF APPLIED PHYSICS, Volume 81, issue 5, page 2179, 1st March 1997.
DOI: 10.1063/1.364270

1996

An optical study of interdiffusion in ZnSe/ZnCdSe
Chai MK, Wee SF, Homewood KP et al.
APPLIED PHYSICS LETTERS, Volume 69, issue 11, page 1579, 9th September 1996.
DOI: 10.1063/1.117036

1995

Comparative study of silicon nitride and phosphine overpressure annealing on the interdiffusion of InGaAsP/InGaAs heterostructures
GILLIN WP, Perrin S, Homewood KP
Journal of Applied Physics, Volume 77, page 1463, 31st December 1995.
DOI: 10.1063/1.358893

Control of defect in C+, Ge+, and Er+ implanted Si using post amorphisation and solid phase regrowth.
Cristiano F, Zhang JP, Wilson RJ et al.
Nuclear Instruments and Methods B, Volume 96, page 265, 31st December 1995.
DOI: 10.1016/0168-583X(94)00497-8

Effect of co-dopants on the photoluminescence of Er3+ in silicon
Pradissitto JJ, Federighi M, Pitt CW et al.
Materials Research Society Symposium - Proceedings, Volume 392, page 217, 1st December 1995.

1994

Characterisation of thermally annealed InGaAs/GaAs single quantum wells by optical spectroscopy and ion beam techniques
Kozanecki A, GILLIN WP
Applied Physics Letters, Volume 64, page 40, 31st December 1994.
DOI: 10.1063/1.110914

Diffusion of ion beam created vacancies and their effect on intermixing; a Gambler’s Ruin approach
GILLIN WP, Kimber AC, Dunstan DJ et al.
Journal of Applied Physics, Volume 76, page 3367, 31st December 1994.
DOI: 10.1063/1.357462

Interdiffusion and thermally induced strain relaxation in GaAs/InGaAs/GaAs single quantum well structures
Kozanecki A, Sealy BJ, GILLIN WP et al.
Nuclear Instruments and Methods in Physics Research B, page 192, 31st December 1994.
DOI: 10.1016/0168-583X(94)95812-2

Thermally induced compositional disordering of InGaAs/GaAs and GaAsSb/GaAs single quantum wells
Kozanecki A, Gillin WP, Sealy BJ et al.
Materials Science Forum, Volume 143-4, issue pt 1, page 605, 1st December 1994.

Interdiffusion of the group-III sublattice in In-Ga-As-P/In-Ga-As-P and In-Ga-As/In-Ga-As heterostructures.
Rao SS, Gillin WP, Homewood KP
Phys Rev B Condens Matter, Volume 50, issue 11, page 8071, 15th September 1994.
DOI: 10.1103/PhysRevB.50.8071

Strain and interdiffusion in semiconductor heterostructures.
Gillin WP, Dunstan DJ
Phys Rev B Condens Matter, Volume 50, issue 11, page 7495, 15th September 1994.
DOI: 10.1103/PhysRevB.50.7495

Thermally induced change in the profile of GaAs/AlGaAs quantum wells
Peyre H, Camassel J, Gillin WP et al.
Materials Science and Engineering B, Volume 28, issue 1-3, page 332, 1st January 1994.
DOI: 10.1016/0921-5107(94)90077-9

1993

Comparison of the effects of ion implantation induced interdiffusion in GaAs/AlGaAs and InGaAs/GaAs single quantum wells
Bradley IV, GILLIN WP, Homewood KP et al.
Nuclear Instruments and Methods in Physics Research B, Volume 80, page 747, 31st December 1993.
DOI: 10.1016/0168-583X(93)90673-T

Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth
GILLIN WP, Dunstan DJ, Homewood KP et al.
Journal of Applied Physics, Volume 73, page 3782, 31st December 1993.

The effect of gallium implantation on the intermixing of InGaAs/GaAs strained quantum wells
GILLIN WP, Bradley IV, Homewood KP et al.
Solid State Communications, Volume 85, page 197, 31st December 1993.
DOI: 10.1016/0038-1098(93)90436-Q

The effects of ion implantation on the interdiffusion coefficient in InGaAs/GaAs quantum well structures
Bradley IV, GILLIN WP, Homewood KP et al.
Journal of Applied Physics, Volume 73, page 1686, 31st December 1993.
DOI: 10.1063/1.353204

The effects of silicon and beryllium on the interdiffusion of GaAs/AlGaAs and InGaAs/GaAs quantum well structures.
GILLIN WP, Bradley IV, Howard LK et al.
Journal of Applied Physics, Volume 73, page 7715, 31st December 1993.
DOI: 10.1063/1.353969

Thermally induced intermixing of InGaAs/GaAs single quantum wells
Kozanecki A, GILLIN WP
Acta Physica Polonica A, Volume 84, page 621, 31st December 1993.
DOI: 10.12693/APhysPolA.84.621

Vacancy controlled interdiffusion in III-V heterostructures
GILLIN WP, Bradley IV, Rao SS et al.
Material Science and Engineering 8, page 281, 31st December 1993.
DOI: 10.1016/0921-5107(93)90367-V

Vacancy controlled interdiffusion of the Group V sublattice in strained In0.66Ga0.33As/In0.66Ga0.33As0.7P0.3 quantum wells
GILLIN WP, Rao SS, Bradley IV et al.
Applied Physics Letters, Volume 63, page 797, 31st December 1993.
DOI: 10.1063/1.109911

Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth
Gillin WP, Dunstan DJ, Homewood KP et al.
Journal of Applied Physics, Volume 73, issue 8, page 3782, 1st December 1993.
DOI: 10.1063/1.352884

EFFECT OF THERMAL-DIFFUSION ON THE EXCITONIC REFLECTIVITY SPECTRA OF INGAAS/GAAS QUANTUM-WELLS
GILLIN WP, PEYRE H, CAMASSEL J et al.
JOURNAL DE PHYSIQUE IV, Volume 3, issue C5, page 291, 1st October 1993.
DOI: 10.1051/jp4:1993558

Group V interdiffusion in In0.66Ga0.33As/ In0.66Ga0.33 As0.7P0.3 quantum well structures
Gillin WP, Bradley IV, Foo WI et al.
1993 IEEE 5th International Conference on Indium Phosphide and Related Materials, page 33, 1st January 1993.

The effect of the thermal interdiffusion on the excitonic reflectivity spectra of InGaAs/GaAs quantum well structures
GILLIN WP, Peyre H, Camassel J et al.
Journal de Physique IV, Volume 3, page 291, 1st January 1993.

1992

Photoluminescence of acceptor states in mercury implanted gallium arsenide
GILLIN WP
Journal of Applied Physics, Volume 71, page 2021, 31st December 1992.
DOI: 10.1063/1.351142

Reactive formation of cobalt silicide on single crystal silicon under rapid electron beam heating
Mahmood F, Ahmed H, Jeynes CJ et al.
Applied Surface Science, Volume 59, page 55, 31st December 1992.
DOI: 10.1016/0169-4332(92)90168-W

THE EFFECT OF CONTROLLED VACANCY INJECTION BY ION-IMPLANTATION ON THE INTERMIXING OF INGAAS/GAAS STRAINED QUANTUM-WELLS
GILLIN WP, BRADLEY IV, HOMEWOOD KP et al.
EMERGING OPTOELECTRONIC TECHNOLOGIES, Volume 1622, page 54, 1st January 1992.
DOI: 10.1117/12.636952

1991

Lattice site location and out diffusion of Hg implanted GaAs
Soares JC, Melo AA, Alves E et al.
Nuclear Instruments and Methods in Physics Research B, Volume 59, page 1090, 31st December 1991.
DOI: 10.1016/0168-583X(91)95771-5

Photoluminescence of deep levels in S implanted AlGaAs
GILLIN WP, Homewood KP, Sealy BJ et al.
Applied Physics Letters, Volume 58, page 1404, 31st December 1991.
DOI: 10.1063/1.105206

Rutherford backscattering and secondary ion mass spectrometry studies of Er implanted silicon
GILLIN WP, Zhang JP, Sealy BJ
Solid State Communications, Volume 77, page 907, 31st December 1991.
DOI: 10.1016/0038-1098(91)90344-U

Thermal interdiffusion in InGaAs/GaAs and GaAsSb/GaAs strained quantum wells as a function of doping density
GILLIN WP, Sealy BJ, Homewood KP
Optical and Quantum Electronics, Volume 23, page S975, 31st December 1991.
DOI: 10.1007/BF00624986

Thermal interdiffusion in InGaAs/GaAs strained quantum wells as a function of doping density
GILLIN WP, Homewood KP, Howard LK et al.
Superlattices and Microstructures, Volume 9, page 39, 31st December 1991.
DOI: 10.1016/0749-6036(91)90089-A

Erratum: Disorder-induced mixing of InGaAs/InP multiple quantum wells by phosphorus implantation for optical wave-guides (Semiconductor Science and Technology (1990) 5 (1063-1066)
Whitehead NJ, Gillin WP, Bradley IV et al.
Semiconductor Science and Technology, Volume 6, issue 11, page 1146, 1st December 1991.
DOI: 10.1088/0268-1242/5/11/515

1990

Disorder induced mixing of InGaAs/InP MQW by phosphorus implantation for optical waveguides
Whitehead NJ, GILLIN WP, Bradley IV et al.
Semiconductor Science and Technology, Volume 5, page 1063, 31st December 1990.
DOI: 10.1088/0268-1242/5/10/009

Thermal processing of GaAsSb/GaAs low dimensional strained layer structures
Homewood KP, GILLIN WP, Pritchard RE et al.
Superlattices and Microstructures, Volume 7, page 359, 31st December 1990.
DOI: 10.1016/0749-6036(90)90226-W

Thermal processing of strained GaInAs/GaAs high hole mobility transistor structures
GILLIN WP, Tang YS, Whitehead NJ et al.
Applied Physics Letters, Volume 56, page 1116, 31st December 1990.
DOI: 10.1063/1.102585

Erratum: Disorder-induced mixing of InGaAs/InP multiple quantum wells by phosphorus implantation for optical wave-guides (Semiconductor Science and Technology (1990) 5 (1063-1066)
Whitehead NJ, Gillin WP, Bradley IV et al.
Semiconductor Science and Technology, Volume 5, issue 11, page 1146, 1st December 1990.
DOI: 10.1088/0268-1242/5/11/515

Optical waveguides formed in InGaAs/InP multi quantum wells by phosphorous implantation
Whitehead NJ, Gillin WP, Bradley IV et al.
IEE Colloquium (Digest), issue 103, 1st December 1990.

Optical waveguides in GaAIAs/GaAs and GaInAs/INP multiquantum well structures
Weiss BL, Wismayer AC, Whitehead NJ et al.
Proceedings of SPIE - The International Society for Optical Engineering, Volume 1177, page 387, 5th January 1990.
DOI: 10.1117/12.963359

1989

Abrupt p+ layers in GaAs by 200ºC Hg implantation
Tang ACT, Gardner SR, Sealy BJ et al.
Electronics Letters, Volume 25, page 1618, 31st December 1989.
DOI: 10.1049/el:19891084

Characteristics of rare earth element erbium implanted in silicon
tang YS, heasman KC, GILLIN WP et al.
Applied Physics Letters, Volume 55, page 432, 31st December 1989.
DOI: 10.1063/1.101888

The effects of air-semiconductor depletion on Hall effect profiling of ion implanted semiconductors
Whitehead NJ, GILLIN WP, Sealy BJ
Solid State Electronics, Volume 32, page 1045, 31st December 1989.
DOI: 10.1016/0038-1101(89)90170-6

The use of Hall effect profiling to monitor the reactivation of silicon implants after oxygen implants in GaAs
Whitehead NJ, Gwilliam RM, GILLIN WP et al.
Vacuum, Volume 39, page 1149, 31st December 1989.
DOI: 10.1016/0042-207X(89)91110-X

 

Analysis of strain in ultra-thin GaAs/In0.2Ga0.8As/GaAs single quantum well structures by channeling technique
GILLIN WP, Kozanecki A, Kacanowski J et al.
Nuclear Instruments and Methods B, Volume 118, page 640, DOI: 10.1016/0168-583X(95)01081-5

Carbon Nanotubes-Quantum Dot Nanohybrids: Coupling with Single Particle Control in Aqueous Solution
PALMA M
Small, DOI: 10.1002/smll.201603042

Influence of anneal atmosphere on ZnO-nanorod photoluminescent and morphological properties with self-powered photodetector performance
Hatch SM, Briscoe J, Sapelkin A et al.
Journal of Applied Physics, DOI: 10.1063/1.4805349

Solution processed SnO2:Sb transparent conductive oxide as alternative to Indium Tin Oxide for applications in Organic Light Emitting Diodes
GILLIN WP
Journal of Materials Chemistry C, DOI: 10.1039/C5TC04117A

The importance of intra-molecular electron spin relaxation in small molecular semiconductors
Schulz L, Willis M, Nuccio L et al.
DOI: 10.1103/PhysRevB.84.085209

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