Professor David Dunstan

Profile

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Research

Research Interests:

David Dunstan contributes to solid-state physics both as an optical spectroscopist and as a theoretician. He has several inventions exploited commercially, and he designed and aligned the lighting for the Hope diamond in the Smithsonian Museum.

He published the definitive article on the mechanism of luminescence in amorphous silicon [PDF 2,869KB], the promising new material for optoelectronics.

At Surrey, with Alf Adams, he added high pressure to his techniques and pioneered the miniaturisation of the diamond-anvil high-pressure cell [PDF 686KB] (*). High-pressure experiments have gathered much important data for optoelectronic technology, particularly using structures with built-in strain.

He has pioneered the use of strained semiconductor structures to achieve breakthroughs in the mechanical properties of solids. His current work is extending critical thickness theory to soft metals, demonstrating quantitatively that a minimum volume is required for plastic deformation, that reducing stressed volumes necessarily makes materials stronger, and that built-in strain modifies the properties profoundly.

Dunstan’s theoretical work has been based on the need to understand experimental results, but has also introduced new insights, e.g. his work on distant-pair recombination kinetics and the nearest-available-neighbour statistical distribution, and his simple scaling or geometrical argument [PDF 1,164KB] (**) for critical thickness.

Click here [PDF 73KB] for a full Publications List (PDF)

* Copyright: Copyright (1988) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Dunstan and Scherrer, Rev. Sci. Instrum. 59, 627 (1988) and may be found at http://link.aip.org/link/?rsi/59/627.

** Copyright: Copyright (1991) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Dunstan et al., J. Appl. Phys. 70, 3038 (1991) and may be found at http://link.aip.org/link/?jap/70/3038.

Publications

• DUNSTAN DJ (2016). Validation of a phenomenological strain-gradient plasticity theory. nameOfConference

  
  

  DOI: 10.1080/09500839.2016.1215605

  
  

  QMRO: https://qmro.qmul.ac.uk/xmlui/handle/123456789/13958

  
  

  Citations: 0
• Li Y, Bushby AJ, Dunstan DJ (2016). The Hall-Petch effect as a manifestation of the general size effect. nameOfConference

  
  

  DOI: 10.1098/rspa.2015.0890

  
  

  QMRO: https://qmro.qmul.ac.uk/xmlui/handle/123456789/12336

  
  

  Citations: 0
• Dunstan DJ, Bushby AJ (2014). Grain size dependence of the strength of metals: The Hall-Petch effect does not scale as the inverse square root of grain size. nameOfConference

  
  

  DOI: 10.1016/j.ijplas.2013.07.004

  
  

  QMRO: qmroHref

  
  

  Citations: 0
• Dunstan DJ, Boulitrop F (1984). Photoluminescence in hydrogenated amorphous silicon. nameOfConference

  
  

  DOI: 10.1103/PhysRevB.30.5945

  
  

  QMRO: qmroHref

  
  

  Citations: 121

Supervision

This is not an exhaustive list and I would be happy to discuss other project possibilities.