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Research

Research Interests:

David Dunstan contributes to solid-state physics both as an optical spectroscopist and as a theoretician. He has several inventions exploited commercially, and he designed and aligned the lighting for the Hope diamond in the Smithsonian Museum.

He published the definitive article on the mechanism of luminescence in amorphous silicon [PDF 2,869KB], the promising new material for optoelectronics.

At Surrey, with Alf Adams, he added high pressure to his techniques and pioneered the miniaturisation of the diamond-anvil high-pressure cell [PDF 686KB] (*). High-pressure experiments have gathered much important data for optoelectronic technology, particularly using structures with built-in strain.

He has pioneered the use of strained semiconductor structures to achieve breakthroughs in the mechanical properties of solids. His current work is extending critical thickness theory to soft metals, demonstrating quantitatively that a minimum volume is required for plastic deformation, that reducing stressed volumes necessarily makes materials stronger, and that built-in strain modifies the properties profoundly.

Dunstan’s theoretical work has been based on the need to understand experimental results, but has also introduced new insights, e.g. his work on distant-pair recombination kinetics and the nearest-available-neighbour statistical distribution, and his simple scaling or geometrical argument [PDF 1,164KB] (**) for critical thickness.

Click here [PDF 73KB] for a full Publications List (PDF)

* Copyright: Copyright (1988) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Dunstan and Scherrer, Rev. Sci. Instrum. 59, 627 (1988) and may be found at http://link.aip.org/link/?rsi/59/627.

** Copyright: Copyright (1991) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Dunstan et al., J. Appl. Phys. 70, 3038 (1991) and may be found at http://link.aip.org/link/?jap/70/3038.

Publications

Recent Publications:

D.J. Dunstan, T.T. Zhu, M. Hopkinson and A.J. Bushby, Mapping the initiation of plastic deformation in nanoindentation, arXiv:1011.0677v1 [cond-mat.mtrl-sci]

A.J. Bushby and D.J. Dunstan, 2010, Size effects in yield and plasticity under uniaxial and non-uniform loading: Experiment and theory, Philosophical Magazine, iFirst, 1-13 [PDF 391KB].

D.J. Dunstan, B.Ehrler, R. Bossis, S. Joly, K.M.Y. P’ng and A.J. Bushby, 2009, Elastic limit and strain-hardening of thin wires in torsion, Physical Review Letters 103, 155501, pp 1-4.

P. Puech, E. Flahaut, A. Sapelkin, H. Hubel, D.J. Dunstan, G. Landa and W.S. Bacsa, 2006, Nanoscale pressure effects in individual double-wall carbon nanotubes, Physical Review B73, 233408 [PDF 191KB].

K.M.Y. P’ng, A.J. Bushby and D.J. Dunstan, 2005, Strength of coherently strained layered superlattices, Philosophical Magazine 85, 4429. [PDF 274KB].

P. Moreau, M. Raulic, K.M.Y. P’ng, G. Gannaway, P. Anderson, W.P. Gillin, A.J. Bushby and D.J. Dunstan, 2005, Measurement of the size effect in the yield strength of nickel foils, Philosophical Magazine Letters 85, 339.

Highlighted Past Papers

D.J. Dunstan and J.J. Davies, 1979, The behaviour of donor acceptor recombination emission in II-VI crystals subjected to magnetic resonance, Journal of Physics C12, 2927.

D.J. Dunstan, 1982, Kinetics of distant-pair recombination: I. Amorphous silicon luminescence at low temperature, Philosophical Magazine B46, 579.

D.J. Dunstan and F. Boulitrop, 1984, Photoluminescence in hydrogenated amorphous silicon, Physical Review B30, 5945. [PDF 2,869KB].

D.J. Dunstan and W. Scherrer, 1988, A miniature cryogenic diamond anvil high pressure cell, Review of Scientific Instruments 59, 627. [PDF 686KB].

J.D.Lambkin, D.J. Dunstan, K.P. Homewood, L.K. Howard and M.T. Emeny, 1990, Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained layer quantum wells, Applied Physics Letters 57, 1986. [PDF 471KB].

R. Beanland, D.J. Dunstan and P.J. Goodhew, 1996, Plastic relaxation and relaxed buffer layers for semiconductor epitaxy, Advances in Physics 45, 87.

J.R Wood, M.D. Frogley, E.R. Meurs, A.D. Prins, T. Peijs, D.J. Dunstan and H.D. Wagner, 1999, Mechanical response of carbon nanotubes under molecular and mechanical pressures, Journal of Physical Chemistry B 103, 10388. Grants

2017

From mesoscale to nanoscale mechanics in single-wall carbon nanotubes
Torres-Dias AC, Cerqueira TFT, Cui W et al.
Carbon, 14th July 2017.
DOI: 10.1016/j.carbon.2017.07.036

Peculiar torsional dynamical response of spider dragline silk
Liu D, Yu L, He Y et al.
Applied Physics Letters, 5th July 2017.
DOI: 10.1063/1.4990676

2016

The new high field photoexcitation muon spectrometer at the ISIS pulsed neutron and muon source
Yokoyama K, Lord JS, Murahari P et al.
Review of Scientific Instruments, 27th December 2016.
DOI: 10.1063/1.4972827

Temporal mapping of photochemical reactions and molecular excited states with carbon specificity
DREW AJ, wang K, Murahari P et al.
Nature Materials, 12th December 2016.
DOI: 10.1038/nmat4816

Validation of a phenomenological strain-gradient plasticity theory
DUNSTAN DJ
Philosophical Magazine Letters: structure and properties of condensed matter, 27th July 2016.
DOI: 10.1080/09500839.2016.1215605

Significance of bundling effects on carbon nanotubes' response to hydrostatic compression
Sun YW, Hernández I, González J et al.
Journal of Physical Chemistry C, Volume 120, issue 3, page 1863, 28th January 2016.
DOI: 10.1021/acs.jpcc.5b09082

2015

Graphite under uniaxial compression along the c axis: A parameter to relate out-of-plane strain to in-plane phonon frequency
Sun YW, Holec D, Dunstan DJ
Physical Review B - Condensed Matter and Materials Physics, Volume 92, issue 9, 22nd September 2015.
DOI: 10.1103/PhysRevB.92.094108

Plasticity and thermal recovery of thin copper wires in torsion
Dong D, Dunstan DJ, Bushby AJ
Philosophical Magazine, Volume 95, issue 16-18, page 1739, 1st January 2015.
DOI: 10.1080/14786435.2014.979262

2014

Plasticity and thermal recovery of thin copper wires in torsion
Dong D, Dunstan DJ, Bushby AJ
Philosophical Magazine, 9th November 2014.
DOI: 10.1080/14786435.2014.979262

Design rules for dislocation filters
Ward T, Sánchez AM, Tang M et al.
Journal of Applied Physics, Volume 116, issue 6, 14th August 2014.
DOI: 10.1063/1.4892162

Resonance Raman spectroscopy of carbon nanotubes: Pressure effects on G-mode
Sun YW, Hernández I, Ghandour AJ et al.
High Pressure Research, Volume 34, issue 2, page 191, 3rd April 2014.
DOI: 10.1080/08957959.2013.878714

Grain size dependence of the strength of metals: The Hall-Petch effect does not scale as the inverse square root of grain size
Dunstan DJ, Bushby AJ
International Journal of Plasticity, Volume 53, page 56, 1st February 2014.
DOI: 10.1016/j.ijplas.2013.07.004

Grain size dependence of the strength of metals: The Hall-Petch effect does not scale as the inverse square root of grain size
Dunstan DJ, Bushby AJ
International Journal of Plasticity, Volume 53, page 56, 1st January 2014.
DOI: 10.1016/j.ijplas.2013.07.004

Resonance Raman spectroscopy of carbon nanotubes: pressure effects on G-mode
Sun YW, Hernández I, Ghandour AJ et al.
High Pressure Research, 1st January 2014.
DOI: 10.1080/08957959.2013.878714

Snails home
Dunstan DJ, Hodgson DJ
Physica Scripta, Volume 89, issue 6, 1st January 2014.
DOI: 10.1088/0031-8949/89/06/068002

2013

Anomalous Plasticity in the Cyclic Torsion of Micron Scale Metallic Wires
Liu D, He Y, Dunstan DJ et al.
PHYSICAL REVIEW LETTERS, Volume 110, issue 24, 11th June 2013.
DOI: 10.1103/PhysRevLett.110.244301

Pressure coefficients of Raman modes of carbon nanotubes resolved by chirality: Environmental effect on graphene sheet
Ghandour AJ, Crowe IF, Proctor JE et al.
PHYSICAL REVIEW B, Volume 87, issue 8, 13th February 2013.
DOI: 10.1103/PhysRevB.87.085416

Toward a further understanding of size effects in the torsion of thin metal wires: An experimental and theoretical assessment
Liu D, He Y, Dunstan DJ et al.
INTERNATIONAL JOURNAL OF PLASTICITY, Volume 41, page 30, 1st February 2013.
DOI: 10.1016/j.ijplas.2012.08.007

The scaling exponent in the size effect of small scale plastic deformation
Dunstan DJ, BUSHBY AJ
International Journal of Plasticity, Volume Volume 40, page 152, 1st January 2013.
DOI: 10.1016/j.ijplas.2012.08.002

2012

Critical Thickness Theory Applied to Micromechanical Testing
Dunstan DJ
ADVANCED ENGINEERING MATERIALS, Volume 14, issue 11, page 942, 1st November 2012.
DOI: 10.1002/adem.201200017

Yield and plastic flow of soft metals in small volumes loaded in tension and flexure
Dunstan DJ, Gallé JU, Hou XD et al.
Philosophical Magazine, Volume 92, issue 25-27, page 3199, 1st September 2012.
DOI: 10.1080/14786435.2012.685967

Testing the limits of small scale plasticity with thin wires in torsion
Bushby AJ, Feuvrier J, Dong DV et al.
Materials Research Society Symposium Proceedings, Volume 1424, page 61, 20th August 2012.
DOI: 10.1557/opl.2012.104

Modeling high-energy radiation damage in nuclear and fusion applications
Trachenko K, Zarkadoula E, Todorov IT et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Volume 277, page 6, 15th April 2012.
DOI: 10.1016/j.nimb.2011.12.058

Observation of the critical thickness phenomenon in dislocation dynamics simulation of microbeam bending
Motz C, Dunstan DJ
ACTA MATERIALIA, Volume 60, issue 4, page 1603, 1st February 2012.
DOI: 10.1016/j.actamat.2011.11.060

New experimental test of strain-gradient plasticity theory: metal foil sandwich structures in flexure
Dunstan DJ, Thomas AJ, de Lavau I et al.
PHILOSOPHICAL MAGAZINE LETTERS, Volume 92, issue 7, page 308, 1st January 2012.
DOI: 10.1080/09500839.2012.669055

Raman excitation spectroscopy of carbon nanotubes: effects of pressure medium and pressure
Ghandour AJ, Sapelkin A, Hernandez I et al.
HIGH PRESSURE RESEARCH, Volume 32, issue 1, page 67, 1st January 2012.
DOI: 10.1080/08957959.2011.649280

2011

Effect of water on resonant Raman spectroscopy of closed single-walled carbon nanotubes
Ghandour AJ, Dunstan DJ, Sapelkin A et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Volume 248, issue 11, page 2548, 1st November 2011.
DOI: 10.1002/pssb.201100074

Micromechanical testing with microstrain resolution.
Dunstan DJ, Gallé JU, Ehrler B et al.
Rev Sci Instrum, Volume 82, issue 9, page 093906, 1st September 2011.
DOI: 10.1063/1.3636074

Raman G-mode of single-wall carbon nanotube bundles under pressure
Ghandour AJ, Dunstan DJ, Sapelkin A
J RAMAN SPECTROSC, Volume 42, issue 8, page 1611, 1st August 2011.
DOI: 10.1002/jrs.2905

Size effects in yield and plasticity under uniaxial and non-uniform loading: experiment and theory
Bushby AJ, Dunstan DJ
PHILOS MAG, Volume 91, issue 7-9, page 1037, 1st January 2011.
DOI: 10.1080/14786435.2010.493533

2009

Elastic Limit and Strain Hardening of Thin Wires in Torsion
Dunstan DJ, Ehrler B, Bossis R et al.
PHYS REV LETT, Volume 103, issue 15, 9th October 2009.
DOI: 10.1103/PhysRevLett.103.155501

The strength of thin films, small structures and materials under localised stresses
Ehrler B, Dunstan DJ, Zhu TT et al.
THIN SOLID FILMS, Volume 517, issue 13, page 3781, 1st May 2009.
DOI: 10.1016/j.tsf.2008.12.053

G-mode behaviour of closed ended single wall carbon nanotubes under pressure
Ghandour AJ, Dunstan DJ, Sapelkin A
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Volume 246, issue 3, page 491, 1st March 2009.
DOI: 10.1002/pssb.200880503

Slip distance model for the indentation size effect at the initiation of plasticity in ceramics and metals
Bushby AJ, Zhu TT, Dunstan DJ
JOURNAL OF MATERIALS RESEARCH, Volume 24, issue 3, page 966, 1st March 2009.
DOI: 10.1557/JMR.2009.0104

Raman G and D band in strongly photoexcited carbon nanotubes
Puech P, Anwar AW, Flahaut E et al.
PHYS REV B, Volume 79, issue 8, 1st February 2009.
DOI: 10.1103/PhysRevB.79.085418

Geometrical Critical Thickness Theory for the Size Effect at the Initiation of Plasticity
Zhu TT, Ehrler B, Bushby AJ et al.
PROBING MECHANICS AT NANOSCALE DIMENSIONS, Volume 1185, page 39, 1st January 2009.

High-pressure studies of carbon nanotubes
Dunstan DJ, Ghandour AJ
HIGH PRESSURE RESEARCH, Volume 29, issue 4, page 548, 1st January 2009.
DOI: 10.1080/08957950903438473

2008

Materials mechanical size effects: a review
Zhu TT, Bushby AJ, Dunstan DJ
MATER TECHNOL, Volume 23, issue 4, page 193, 1st December 2008.
DOI: 10.1179/175355508X376843

High-pressure Raman response of single-walled carbon nanotubes: Effect of the excitation laser energy
Ghandour AJ, Dunstan DJ, Sapelkin A et al.
PHYS REV B, Volume 78, issue 12, 1st September 2008.
DOI: 10.1103/PhysRevB.78.125420

Raman G band in double-wall carbon nanotubes combining p doping and high pressure
Puech P, Ghandour A, Sapelkin A et al.
PHYS REV B, Volume 78, issue 4, 1st July 2008.
DOI: 10.1103/PhysRevB.78.045413

Derivation of special relativity from Maxwell and Newton.
Dunstan DJ
Philos Trans A Math Phys Eng Sci, Volume 366, issue 1871, page 1861, 28th May 2008.
DOI: 10.1098/rsta.2007.2195

Enzyme sequence and its relationship to hyperbaric stability of artificial and natural fish lactate dehydrogenases.
Brindley AA, Pickersgill RW, Partridge JC et al.
PLoS One, Volume 3, issue 4, page e2042, 30th April 2008.
DOI: 10.1371/journal.pone.0002042

Indentation size effect at the initiation of plasticity for ceramics and metals
Zhu TT, Hou XD, Bushby AJ et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, Volume 41, issue 7, 7th April 2008.
DOI: 10.1088/0022-3727/41/7/074004

Size effect in the initiation of plasticity for ceramics in nanoindentation
Zhu TT, Bushby AJ, Dunstan DJ
J MECH PHYS SOLIDS, Volume 56, issue 4, page 1170, 1st April 2008.
DOI: 10.1016/j.jmps.2007.10.003

Large-scale, reliable and robust SERS-active nanowire substrates prepared using porous alumina templates
Kartopu G, Es-Souni M, Sapelkin AV et al.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Volume 8, issue 2, page 931, 1st February 2008.
DOI: 10.1166/jnn.2008.D204

Chemical doping by sulfuric acid in double wall carbon nanotubes
Puech P, Ghandour A, Sapelkin A et al.
NSTI NANOTECH 2008, VOL 1, TECHNICAL PROCEEDINGS, page 23, 1st January 2008.

Grain size and sample size interact to determine strength in a soft metal
Ehrler B, Hou XD, Zhu TT et al.
PHILOS MAG, Volume 88, issue 25, page 3043, 1st January 2008.
DOI: 10.1080/14786430802392548

Mapping of the initial volume at the onset of plasticity in nanoindentation
Zhu TT, P'ng KMY, Hopkinson A et al.
FUNDAMENTALS OF NANOINDENTATION AND NANOTRIBOLOGY IV, Volume 1049, page 85, 1st January 2008.

2007

Quantum molecular dynamics study of the pressure dependence of the ammonia inversion transition
Herbauts IM, Dunstan DJ
PHYS REV A, Volume 76, issue 6, 1st December 2007.
DOI: 10.1103/PhysRevA.76.062506

Solvation pressure in ethanol by molecular dynamics simulations
Berryman PJ, Faux DA, Dunstan DJ
PHYS REV B, Volume 76, issue 10, 1st September 2007.
DOI: 10.1103/PhysRevB.76.104303

Energy functions for rubber from microscopic potentials
Johal AS, Dunstan DJ
JOURNAL OF APPLIED PHYSICS, Volume 101, issue 8, 15th April 2007.
DOI: 10.1063/1.2723870

Raman spectroscopy of single-walled carbon nanotubes at high pressure: Effect of interactions between the nanotubes and pressure transmitting media
Proctor JE, Halsall MP, Ghandour A et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Volume 244, issue 1, page 147, 1st January 2007.
DOI: 10.1002/pssb.200672585

Strength of strained quantum wells and other small scale structures
Dunstan DJ, P'ng KMY, Zhu TT et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Volume 244, issue 1, page 93, 1st January 2007.
DOI: 10.1002/pssb.200672546

2006

Effect of chemical environment on high-pressure Raman response of single-walled carbon nanotubes
Proctor JE, Halsall MP, Ghandour A et al.
HIGH PRESSURE RESEARCH, Volume 26, issue 4, page 335, 1st December 2006.
DOI: 10.1080/08957950601101944

High pressure Raman spectroscopy of single-walled carbon nanotubes: Effect of chemical environment on individual nanotubes and the nanotube bundle
Proctor JE, Halsall MP, Ghandour A et al.
J PHYS CHEM SOLIDS, Volume 67, issue 12, page 2468, 1st December 2006.
DOI: 10.1016/j.jpcs.2006.06.024

Size effect in the initiation of plasticity for ceramics in nanoscale contact loading
Zhu TT, Hou XD, Walker CJ et al.
Materials Research Society Symposium Proceedings, Volume 976, page 1, 1st December 2006.

Strength of coherently strained nanolayers under high temperature nanoindentation
P'ng KMY, Hou XD, Dunstan DJ et al.
Materials Research Society Symposium Proceedings, Volume 977, page 103, 1st December 2006.

Reply to "Comment on 'Reappraisal of experimental values of third-order elastic constants of some cubic semiconductors and metals'"
Johal AS, Dunstan DJ
PHYS REV B, Volume 74, issue 14, 1st October 2006.
DOI: 10.1103/PhysRevB.74.146102

A novel SERS-active substrate system: Template-grown nanodot-film structures
Kartopu G, Es-Souni M, Sapelkin AV et al.
PHYS STATUS SOLIDI A, Volume 203, issue 10, page R82, 1st August 2006.
DOI: 10.1002/pssa.200622238

Nanoscale pressure effects in individual double-wall carbon nanotubes
Puech P, Flahaut E, Sapelkin A et al.
PHYS REV B, Volume 73, issue 23, 1st June 2006.
DOI: 10.1103/PhysRevB.73.233408

Solvation pressure in chloroform
Hubel H, Faux DA, Jones RB et al.
J CHEM PHYS, Volume 124, issue 20, 28th May 2006.
DOI: 10.1063/1.2199531

Reappraisal of experimental values of third-order elastic constants of some cubic semiconductors and metals
Johal AS, Dunstan DJ
PHYS REV B, Volume 73, issue 2, 1st January 2006.
DOI: 10.1103/PhysRevB.73.024106

2005

Strength of coherently strained layered superlattices
P'Ng KMY, Bushby AJ, Dunstan DJ
PHILOS MAG, Volume 85, issue 36, page 4429, 21st December 2005.
DOI: 10.1080/14786430500313812

Effect of coherency strain on the deformation of InxGa1-xAs superlattices under nanoindentation and bending
Lloyd SJ, P'Ng KMY, Clegg WJ et al.
PHILOS MAG, Volume 85, issue 22, page 2469, 1st August 2005.
DOI: 10.1080/14786430500070909

Measurement of the size effect in the yield strength of nickel foils
Moreau P, Raulic M, P'ng KMY et al.
PHIL MAG LETT, Volume 85, issue 7, page 339, 1st July 2005.
DOI: 10.1080/09500830500071564

Effective elastic constants in nonlinear elasticity
Bosher SHB, Dunstan DJ
J APPL PHYS, Volume 97, issue 10, 15th May 2005.
DOI: 10.1063/1.1894586

2004

Enhanced Raman signal of CH 3 on carbon nanotubes
Bassil A, Puech P, Landa G et al.
Materials Research Society Symposium Proceedings, Volume 858, page 307, 1st December 2004.

Structural and mechanical properties of double wall carbon nanotubes
Bacsa RR, Laurent C, Peigney A et al.
2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004, Volume 3, page 214, 2nd November 2004.

Determination of ordering effects on GaInP pressure coefficients
Prins AD, Sly JL, Dunstan DJ et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Volume 241, issue 14, page 3123, 1st November 2004.
DOI: 10.1002/pssb.200405252

Light scattering of double wall carbon nanotubes under hydrostatic pressure: pressure effects on the internal and external tubes
Puech P, Hubel H, Dunstan DJ et al.
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Volume 241, issue 14, page 3360, 1st November 2004.
DOI: 10.1002/pssb.200405227

Theory of deformation in small volumes of material
Dunstan DJ, Bushby AJ
P ROY SOC LOND A MAT, Volume 460, issue 2050, page 2781, 8th October 2004.
DOI: 10.1098/rspa.2004.1306

Raman scattering in InN films and nanostructures
Pinquier C, Demangeot F, Frandon J et al.
SUPERLATTICES AND MICROSTRUCTURES, Volume 36, issue 4-6, page 581, 1st October 2004.
DOI: 10.1016/j.spmi.2004.09.015

Raman scattering in hexagonal InN under high pressure
Pinquier C, Demangeot F, Frandon J et al.
PHYS REV B, Volume 70, issue 11, 1st September 2004.
DOI: 10.1103/PhysRevB.70.113202

Discontinuous tangential stress in double wall carbon nanotubes
Puech P, Hubel H, Dunstan DJ et al.
PHYS REV LETT, Volume 93, issue 9, 27th August 2004.
DOI: 10.1103/PhysRevLett.93.095506

Bohr isn't wrong yet
Dunstan D
NEW SCI, Volume 183, issue 2459, page 24, 7th August 2004.

Deformation of small volumes of material using nanostructured strained layered superlattices
P'ng KMY, Bushby AJ, Dunstan DJ
MATERIALS SCIENCE AND TECHNOLOGY, Volume 20, issue 8, page 996, 1st August 2004.
DOI: 10.1179/026708304225016770

Measurement of conduction band minima in ordered and disordered GaInP
Prins AD, Sly JL, Dunstan DJ et al.
JOURNAL OF CRYSTAL GROWTH, Volume 268, issue 3-4, page 378, 1st August 2004.
DOI: 10.1016/j.jcrysgro.2004.04.058

Raman spectroscopy of B12As2 under high pressure
Pomeroy JW, Kuball M, Hubel H et al.
J APPL PHYS, Volume 96, issue 1, page 910, 1st July 2004.
DOI: 10.1063/1.1753072

A novel high pressure tool: the solvation pressure of liquids
Hubel H, van Uden NWA, Faux DA et al.
JOURNAL OF PHYSICS-CONDENSED MATTER, Volume 16, issue 14, page S1181, 14th April 2004.
DOI: 10.1088/0953-8984/16/14/029

Harmonic and anharmonic components of third-order elastic constants
Skipp JM, Dunstan DJ
PHYS REV B, Volume 69, issue 5, 1st February 2004.
DOI: 10.1103/PhysRevB.69.054105

Critical thickness theory and the yield of thin beams
Bushby A, Dunstan D
SURFACES AND INTERFACES IN NANOSTRUCTURED MATERIALS AND TRENDS IN LIGA, MINIATURIZATION, AND NANOSCALE MATERIALS, page 283, 1st January 2004.

Plasticity size effects in nanoindentation
Bushby AJ, Dunstan DJ
J MATER RES, Volume 19, issue 1, page 137, 1st January 2004.
DOI: 10.1557/JMR.2004.0016

2003

III-V semiconductors solve mechanical riddle
Dunstan D, BUSHBY AJ, Gillin W
III-Vs Review, Volume 16, issue 9, page 39, 1st December 2003.
DOI: 10.1016/S0961-1290(03)00084-X

Negative effective pressures in liquid mixtures
Van Uden NWA, Hubel H, Faux DA et al.
HIGH PRESSURE RESEARCH, Volume 23, issue 3, page 205, 1st September 2003.
DOI: 10.1080/0895795032000102351

Practical non-linear elasticity theory for large strains
Bosher SHB, Dunstan DJ
HIGH PRESSURE RESEARCH, Volume 23, issue 3, page 323, 1st September 2003.
DOI: 10.1080/0895795031000139208

The onset of plasticity in nanoscale contact loading
Jayaweera NB, Downes JR, Frogley MD et al.
P ROY SOC LOND A MAT, Volume 459, issue 2036, page 2049, 8th August 2003.
DOI: 10.1098/rspa.2002.1093

Solvation pressure as real pressure: I. Ethanol and starch under negative pressure
van Uden NWA, Hubel H, Faux DA et al.
J PHYS-CONDENS MAT, Volume 15, issue 10, page 1577, 19th March 2003.
DOI: 10.1088/0953-8984/15/10/306

Accurate determination of (AlxGa1-x)(0.5)In0.5P alloy pressure coefficients
Harada J, Kobayashi T, Prins AD et al.
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Volume 235, issue 2, page 505, 1st February 2003.
DOI: 10.1002/pssb.200301611

Reliable non-linear elastic constants
Dunstan DJ, Bosher SHB
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Volume 235, issue 2, page 396, 1st February 2003.
DOI: 10.1002/pssb.200301591

Deformation of small volumes of material studied using strained-layer superlattice structures
P'ng KMY, Bushby AJ, Dunstan DJ
MECHANICAL PROPERTIES DERIVED FROM NANOSTRUCTURING MATERIALS, Volume 778, page 171, 1st January 2003.

Geometrical contribution to yield strength in small volumes
Dunstan DJ, Bushby AJ
MECHANICAL PROPERTIES DERIVED FROM NANOSTRUCTURING MATERIALS, Volume 778, page 321, 1st January 2003.

Yield of InxGa1-xAs superlattices under bending and nanoindentation
Lloyd SJ, P'ng KMY, Bushby AJ et al.
MECHANICAL PROPERTIES DERIVED FROM NANOSTRUCTURING MATERIALS, Volume 778, page 43, 1st January 2003.

2002

Double subtractive spectrometer as a tunable high-resolution broad-bandpass optical filter
Dunstan DJ, Frogley MD
REV SCI INSTRUM, Volume 73, issue 11, page 3742, 1st November 2002.
DOI: 10.1063/1.1512338

High pressure instrumentation: Low and negative pressures
Dunstan DJ, Van Uden NWA, Ackland GJ
HIGH PRESSURE RESEARCH, Volume 22, issue 3-4, page 773, 1st June 2002.
DOI: 10.1080/08957950290014993

Effective thermodynamic elastic constants under finite deformation
Dunstan DJ, Bosher SHB, Downes JR
APPL PHYS LETT, Volume 80, issue 15, page 2672, 15th April 2002.
DOI: 10.1063/1.1469658

A theory of non-linear elasticity compatible with the Murnaghan equation of state
Downes JR, Bosher SHB, Dunstan DJ
HIGH PRESSURE RESEARCH, Volume 22, issue 1, page 231, 1st April 2002.
DOI: 10.1080/08957950290011455

Determination of the mode Gruneisen parameter of AlN using different fits on experimental high pressure data
Van Uden NWA, Hubel H, Hayes JM et al.
HIGH PRESSURE RESEARCH, Volume 22, issue 1, page 37, 1st April 2002.
DOI: 10.1080/08957950290010582

Measurement and interpretation of strain by high-resolution X-ray diffraction
Dunstan DJ
APPLIED SURFACE SCIENCE, Volume 188, issue 1-2, page 69, 13th March 2002.
DOI: 10.1016/S0169-4332(01)00703-6

A standard diamond-anvil cell adapted for work on biological molecules and soft solids
van Uden NWA, Dunstan DJ
HIGH PRESSURE EFFECTS IN CHEMISTRY, BIOLOGY AND MATERIALS SCIENCE, Volume 208-2, page 299, 1st January 2002.

Deformation of InxGa1-xAs superlatices under bending and nanoindentation
Lloyd SJ, P'ng KMY, BUSHBY AJ et al.
Microscopy and Microanalysis, Volume 8, issue Suppl 2, page 554, 1st January 2002.
DOI: 10.1017/S1431927602105447

2001

Coherency Strain and a New Yield Criterion
Jayaweera NB, Downes JR, Dunstan DJ et al.
Materials Research Society Symposium Proceedings, Volume 634, page B4.10.1, 1st December 2001.

Physical Origin of a Size Effect in Nano-indentation
BUSHBY AJ, Downes JR, Jayaweera NB et al.
Materials Research Society Symposium Proceedings, Volume 649, page Q8.4, 1st December 2001.

Raman scattering studies on single-crystalline bulk AlN: temperature and pressure dependence of the AlN phonon modes
Kuball M, Hayes JM, Shi Y et al.
JOURNAL OF CRYSTAL GROWTH, Volume 231, issue 3, page 391, 1st October 2001.
DOI: 10.1016/S0022-0248(01)01469-5

Photoluminescence of (111) InxGa1-xAs/GaAs strained-layer quantum wels under hydrostatic pressure
van Uden NWA, Downes JR, Dunstan DJ
PHYS REV B, Volume 63, issue 23, 15th June 2001.
DOI: 10.1103/PhysRevB.63.233304

Raman scattering studies on single-crystalline bulk AlN under high pressures
Kuball M, Hayes JM, Prins AD et al.
APPL PHYS LETT, Volume 78, issue 6, page 724, 5th February 2001.
DOI: 10.1063/1.1344567

Theory of the anomalous low band-gap pressure coefficients of semiconductor strained layers
Downes JR, Van Uden NWA, Bosher SHB et al.
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Volume 223, issue 1, page 205, 1st January 2001.
DOI: 10.1002/1521-3951(200101)223:1<205::AID-PSSB205>3.0.CO;2-E

2000

Theory of the anomalously low band-gap pressure coefficients in strained-layer semiconductor alloys
Frogley MD, Downes JR, Dunstan DJ
Physical Review B - Condensed Matter and Materials Physics, Volume 62, issue 20, page 13612, 15th November 2000.
DOI: 10.1103/PhysRevB.62.13612

Zen diamond-anvil low-pressure cell
Van Uden NWA, Dunstan DJ
Review of Scientific Instruments, Volume 71, issue 11, page 4174, 1st November 2000.
DOI: 10.1063/1.1290506

Carbon nanotubes: From molecular to macroscopic sensors
Wood JR, Zhao Q, Frogley MD et al.
PHYS REV B, Volume 62, issue 11, page 7571, 15th September 2000.
DOI: 10.1103/PhysRevB.62.7571

Response to "Comment on 'Analysis of high-resolution x-ray diffraction in semiconductor strained layers' " [J. Appl. Phys. 87, 8212 (2000)]
Dunstan DJ, Kimber AC
JOURNAL OF APPLIED PHYSICS, Volume 87, issue 11, page 8215, 1st June 2000.
DOI: 10.1063/1.373525

Identity of molecular and macroscopic pressure on carbon nanotubes
Wood JR, Frogley MD, Prins AD et al.
HIGH PRESSURE RESEARCH, Volume 18, issue 1-6, page 153, 1st January 2000.
DOI: 10.1080/08957950008200962

1999

Mechanical response of carbon nanotubes under molecular and macroscopic pressures
Wood JR, Frogley MD, Meurs ER et al.
J PHYS CHEM B, Volume 103, issue 47, page 10388, 25th November 1999.
DOI: 10.1021/jp992136t

Control of plasticity with coherency strain
Jayaweera NB, Bushby AJ, Kidd P et al.
PHIL MAG LETT, Volume 79, issue 6, page 343, 1st June 1999.
DOI: 10.1080/095008399177183

Dream on
Dunstan D
PHYSICS WORLD, Volume 12, issue 5, page 17, 1st May 1999.
DOI: 10.1088/2058-7058/12/5/20

Raman spectroscopy of GaAs and InGaAs under pressure
Whitaker MF, Dunstan DJ
Journal of Physics Condensed Matter, Volume 11, issue 13, page 2861, 5th April 1999.
DOI: 10.1088/0953-8984/11/13/020

Analysis of high-resolution X-ray diffraction in semiconductor strained layers
Dunstan DJ, Colson HG, Kimber AC
Journal of Applied Physics, Volume 86, issue 2, page 782, 1st January 1999.
DOI: 10.1063/1.370805

Comparability and reliability of high-pressure band-gap data in tetrahedral semiconductors
Frogley MD, Dunstan DJ
Physica Status Solidi (B) Basic Research, Volume 211, issue 1, page 17, 1st January 1999.
DOI: 10.1002/(SICI)1521-3951(199901)211:1<17::AID-PSSB17>3.3.CO;2-U

Experimental techniques in the diamond anvil cell
Dunstan DJ
HIGH PRESSURE MOLECULAR SCIENCE, Volume 358, page 87, 1st January 1999.

Growth and characterisation of relaxed buffer layers
Dunstan DJ, Colson HG, Mason NJ
LATTICE MISMATCHED THIN FILMS, page 139, 1st January 1999.

Investigations of semiconductor band structure using high pressure.
Dunstan DJ
HIGH PRESSURE MOLECULAR SCIENCE, Volume 358, page 109, 1st January 1999.

1998

Fault philosophy
Dunstan D
PHYSICS WORLD, Volume 11, issue 12, page 17, 1st December 1998.
DOI: 10.1088/2058-7058/11/12/16

Predictive power
Dunstan D
Physics World, Volume 11, issue 6, page 15, 1st December 1998.

Pressure dependence of the direct band gap in tetrahedral semiconductors
Frogley MD, Sly JL, Dunstan DJ
Physical Review B - Condensed Matter and Materials Physics, Volume 58, issue 19, page 12579, 1st December 1998.
DOI: 10.1103/PhysRevB.58.12579

The role of experimental error in arrhenius plots: Self-diffusion in semiconductors
Dunstan DJ
Solid State Communications, Volume 107, issue 4, page 159, 1st December 1998.
DOI: 10.1016/S0038-1098(98)00172-0

Raman and absorption spectroscopy of InP under high pressure
Whitaker MF, Webb SJ, Dunstan DJ
Journal of Physics Condensed Matter, Volume 10, issue 38, page 8611, 28th September 1998.
DOI: 10.1088/0953-8984/10/38/019

Combined Raman and transmission spectroscopy of ZnTe under pressure
Frogley MD, Dunstan DJ, Palosz W
Solid State Communications, Volume 107, issue 10, page 537, 29th July 1998.
DOI: 10.1016/S0038-1098(98)00276-2

Diffusion in semiconductors
Gillin WP, Dunstan DJ
COMPUTATIONAL MATERIALS SCIENCE, Volume 11, issue 2, page 96, 1st April 1998.
DOI: 10.1016/S0927-0256(97)00199-7

Band offsets in near-GaAs alloys
Whitaker MF, Dunstan DJ, Hopkinson M
1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, page 279, 1st January 1998.

1997

Coherency strain as an athermal strengthening mechanism
Brenchley ME, Hopkinson M, Kelly A et al.
Physical Review Letters, Volume 78, issue 20, page 3912, 1st December 1997.
DOI: 10.1103/PhysRevLett.78.3912

Strain and strain relaxation in semiconductors
Dunstan DJ
Journal of Materials Science: Materials in Electronics, Volume 8, issue 6, page 337, 1st December 1997.
DOI: 10.1023/A:1018547625106

Critical thickness and relaxation of (111) oriented strained epitaxial layers
Colson HG, Kidd P, Dunstan DJ
Microelectronics Journal, Volume 28, issue 8-10, page 785, 1st October 1997.
DOI: 10.1016/S0026-2692(96)00117-6

Equilibrium critical thickness of epitaxial strained layers in the {111} orientations
Colson HG, Dunstan DJ
Journal of Applied Physics, Volume 81, issue 6, page 2898, 15th March 1997.
DOI: 10.1063/1.363951

Analysis of the shortcomings of the Matthews-Blakeslee theory of critical thickness at higher strains
Downes JR, Dunstan DJ, Faux DA
Philosophical Magazine Letters, Volume 76, issue 2, page 77, 1st January 1997.
DOI: 10.1080/095008397179237

Electron-beam-generated carrier distributions in semiconductor multilayer structures
Mohr H, Dunstan DJ
Journal of Microscopy, Volume 187, issue 2, page 119, 1st January 1997.
DOI: 10.1046/j.1365-2818.1997.2190778.x

1996

Coherency strain and high strength at high temperature
Brenchley ME, Dunstan DJ, Kidd P et al.
Materials Research Society Symposium - Proceedings, Volume 434, page 147, 1st December 1996.

Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers
Kidd P, Dunstan DJ, Colson HG et al.
Journal of Crystal Growth, Volume 169, issue 4, page 649, 1st December 1996.
DOI: 10.1016/S0022-0248(96)00665-3

A general approach to measurement of band offsets of near-GaAs alloys
Whitaker MF, Dunstan DJ, Missous M et al.
Physica Status Solidi (B) Basic Research, Volume 198, issue 1, page 349, 1st November 1996.
DOI: 10.1002/pssb.2221980146

Determination of the linear pressure coefficients of semiconductor bandgaps
Prins AD, Sly JL, Dunstan DJ
Physica Status Solidi (B) Basic Research, Volume 198, issue 1, page 57, 1st November 1996.
DOI: 10.1002/pssb.2221980108

Relaxation behavior of undoped In x Ga 1-x P 0.5<×<0.7 grown on GaAs by atomic layer molecular-beam epitaxy
González L, González Y, Aragón G et al.
Journal of Applied Physics, Volume 80, issue 6, page 3327, 15th September 1996.
DOI: 10.1063/1.363243

Pressure dependence of the photoluminescence of strained (001) and (111) InxGa1-xAs quantum wells
Sly JL, Dunstan DJ
Physical Review B - Condensed Matter and Materials Physics, Volume 53, issue 15, page 10116, 15th April 1996.
DOI: 10.1103/PhysRevB.53.10116

Plastic relaxation and relaxed buffer layers for semiconductor epitaxy
Beanland R, Dunstan DJ, Goodhew PJ
Advances in Physics, Volume 45, issue 2, page 87, 1st April 1996.
DOI: 10.1080/00018739600101477

Interpretation of double-crystal x-ray rocking curves in relaxed strained-layer structures
Lourenço MA, Dunstan DJ
Journal of Applied Physics, Volume 79, issue 6, page 3011, 15th March 1996.
DOI: 10.1063/1.361295

Diamond-anvil uniaxial stress cell
Jones G, Dunstan DJ
Review of Scientific Instruments, Volume 67, issue 2, page 489, 1st February 1996.
DOI: 10.1063/1.1146626

Predictability of plastic relaxation in metamorphic epitaxy
Dunstan DJ, Kidd P, Beanland R et al.
Materials Science and Technology, Volume 12, issue 2, page 181, 1st February 1996.
DOI: 10.1179/mst.1996.12.2.181

Mathematical model for strain relaxation in multilayer metamorphic epitaxial structures
Dunstan DJ
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, Volume 73, issue 5, page 1323, 1st January 1996.
DOI: 10.1080/01418619608245135

1995

Design of InGaAs linear graded buffer structures
Sacedón A, González-Sanz F, Calleja E et al.
Applied Physics Letters, page 3334, 1st December 1995.
DOI: 10.1063/1.113748

Direct measurement of band offsets in GaInP/AlGaInP using high pressure
Prins AD, Sly JL, Meney AT et al.
Journal of Physics and Chemistry of Solids, Volume 56, issue 3-4, page 423, 1st March 1995.
DOI: 10.1016/0022-3697(94)00216-9

High pressure determination of AlGaInP band structure
Prins AD, Sly JL, Meney AT et al.
Journal of Physics and Chemistry of Solids, Volume 56, issue 3-4, page 349, 1st March 1995.
DOI: 10.1016/0022-3697(94)00206-1

PRESSURE-INDUCED SHALLOW-DEEP A(1) TRANSITION FOR SN DONOR IN GAAS OBSERVED IN DIAMOND-ANVIL CELL PHOTOLUMINESCENCE EXPERIMENT
DMOCHOWSKI JE, STRADLING RA, SLY J et al.
ACTA PHYSICA POLONICA A, Volume 87, issue 2, page 457, 1st February 1995.
DOI: 10.12693/APhysPolA.87.457

Application of Monte Carlo simulation to EBIC-contrast modelling
Mohr H, Dunstan DJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, Volume 146, page 697, 1st January 1995.

Determination of the Band Structure of Disordered AlGaInP and its Influence on Visible-Laser Characteristics
Meney AT, Prins AD, Phillips AF et al.
IEEE Journal on Selected Topics in Quantum Electronics, Volume 1, issue 2, page 697, 1st January 1995.
DOI: 10.1109/2944.401259

1994

Diffusion of ion beam created vacancies and their effect on intermixing; a Gambler’s Ruin approach
GILLIN WP, Kimber AC, Dunstan DJ et al.
Journal of Applied Physics, Volume 76, page 3367, 31st December 1994.
DOI: 10.1063/1.357462

New determination of the band structure of disordered AlGaInP and its influence on visible laser characteristics
Phillips AF, Meney AT, Prins AD et al.
Conference Digest - IEEE International Semiconductor Laser Conference, page 201, 1st December 1994.

Numerical calculation of equilibrium critical thickness in strained-layer epitaxy
Downes JR, Dunstan DJ, Faux DA
Semiconductor Science and Technology, Volume 9, issue 6, page 1265, 1st December 1994.
DOI: 10.1088/0268-1242/9/6/018

Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures
Dunstan DJ, Kidd P, Fewster PF et al.
Applied Physics Letters, Volume 65, issue 7, page 839, 1st December 1994.
DOI: 10.1063/1.112177

Enhanced exciton blue shift in spin polarized dense exciton system in quantum wells
Amand T, Marie X, Baylac B et al.
Physics Letters A, Volume 193, issue 1, page 105, 19th September 1994.
DOI: 10.1016/0375-9601(94)00588-5

Strain and interdiffusion in semiconductor heterostructures.
Gillin WP, Dunstan DJ
Phys Rev B Condens Matter, Volume 50, issue 11, page 7495, 15th September 1994.
DOI: 10.1103/PhysRevB.50.7495

BUCKLING OF COMPRESSIVELY STRAINED EPITAXIAL CRYSTAL-STRUCTURES
SIDDLE DR, DUNSTAN DJ
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, Volume 70, issue 2, page 233, 1st August 1994.
DOI: 10.1080/01418619408243182

Exciton formation and hole-spin relaxation in intrinsic quantum wells
Amand T, Dareys B, Baylac B et al.
Physical Review B, Volume 50, issue 16, page 11624, 1st January 1994.
DOI: 10.1103/PhysRevB.50.11624

Exciton formation in quantum wells
Dareys B, Marie X, Amand T et al.
Solid State Communications, Volume 90, issue 4, page 237, 1st January 1994.
DOI: 10.1016/0038-1098(94)90467-7

PREDICTING RELAXATION IN STRAINED EPITAXIAL LAYERS
BEANLAND R, DUNSTAN DJ, GOODHEW PJ
SCANNING MICROSCOPY, Volume 8, issue 4, page 859, 1st January 1994.

1993

Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth
Gillin WP, Dunstan DJ, Homewood KP et al.
Journal of Applied Physics, Volume 73, issue 8, page 3782, 1st December 1993.
DOI: 10.1063/1.352884

EVIDENCE OF GAMMA-FREE OR BOUND-TO-DEEP ACCEPTOR CHARACTER OF THE Y-1.2 EV DEEP PHOTOLUMINESCENCE LINE IN N-TYPE GE-DOPED GAAS DERIVED FROM HIGH HYDROSTATIC-PRESSURE EXPERIMENTS IN DIAMOND-ANVIL CELL
DMOCHOWSKI JE, STRADLING RA, PRINS AD et al.
ACTA PHYSICA POLONICA A, Volume 84, issue 4, page 649, 1st October 1993.
DOI: 10.12693/APhysPolA.84.649

EXCITED-STATE EXCITONS IN STRAINED QUANTUM-WELLS UNDER PRESSURE
LEONG D, PRINS AD, MENEY AT et al.
JOURNAL DE PHYSIQUE IV, Volume 3, issue C5, page 331, 1st October 1993.
DOI: 10.1051/jp4:1993568

Excited-state excitons in strained quantum wells under pressure
Leong D, Prins AD, Meney AT et al.
Journal De Physique. IV : JP, Volume 3, issue 5, page 331, 1st October 1993.
DOI: 10.1051/jp4:1993568

SPIN RELAXATION OF EXCITONS IN STRAINED INGAAS/GAAS QUANTUM-WELLS
DAREYS B, AMAND T, MARIE X et al.
JOURNAL DE PHYSIQUE IV, Volume 3, issue C5, page 351, 1st October 1993.
DOI: 10.1051/jp4:1993573

Electronic structure of (In,Ga) As(Ga, Al) As strained-layer quantum wells
Dunstan DJ, Gil B
Materials Science and Engineering B, Volume 20, issue 1-2, page 58, 30th June 1993.
DOI: 10.1016/0921-5107(93)90396-5

Growth and characterization of relaxed epilayers of InGaAs on GaAs
Dunstan DJ, Dixon RH, Kidd P et al.
Journal of Crystal Growth, Volume 126, issue 4, page 589, 1st February 1993.
DOI: 10.1016/0022-0248(93)90808-A

APPLICATIONS OF DIAMOND-ANVIL CELLS TO MATERIALS SCIENCE
DUNSTAN DJ
HIGH PRESSURE CHEMISTRY, BIOCHEMISTRY AND MATERIALS SCIENCE, Volume 401, page 101, 1st January 1993.

CRITICAL THICKNESS PHENOMENA - THE DISTINCTION BETWEEN THE EXISTENCE OF INTERFACIAL DISLOCATIONS AND SIGNIFICANT LATTICE-RELAXATION
KIDD P, FEWSTER PF, ANDREW NL et al.
MICROSCOPY OF SEMICONDUCTING MATERIALS 1993, issue 134, page 585, 1st January 1993.

Evidence of type-I band offsets in strained GaAs1-xSbx/GaAs quantum wells from high-pressure photoluminescence
Prins AD, Dunstan DJ, Lambkin JD et al.
Physical Review B, Volume 47, issue 4, page 2191, 1st January 1993.
DOI: 10.1103/PhysRevB.47.2191

RECENT DEVELOPMENTS IN DIAMOND-ANVIL CELLS
DUNSTAN DJ
HIGH PRESSURE CHEMISTRY, BIOCHEMISTRY AND MATERIALS SCIENCE, Volume 401, page 79, 1st January 1993.

RELAXED EPITAXIAL LAYERS - THE EFFECT OF AN ADDED INTERFACE
KIDD P, DUNSTAN DJ, GREY R et al.
MICROSCOPY OF SEMICONDUCTING MATERIALS 1993, issue 134, page 321, 1st January 1993.

Spin orientation by optical pumping in strained In x Ga 1-x As/GaAs quantum wells
Hassen F, Bacquet G, Lauret N et al.
Solid State Communications, Volume 87, issue 10, page 889, 1st January 1993.
DOI: 10.1016/0038-1098(93)90723-Z

Thermal quenching and retrapping effects in the photoluminescence of InyGa1-yAs/GaAs/AlxGa1-xAs multiple-quantum-well structures
Vening M, Dunstan DJ, Homewood KP
Physical Review B, Volume 48, issue 4, page 2412, 1st January 1993.
DOI: 10.1103/PhysRevB.48.2412

1992

On the Measurement of Absolute Radiative and Non-Radiative Recombination Efficiencies in Semiconductor Lasers
Dunstan DJ
Journal of Physics D: Applied Physics, Volume 25, issue 12, page 1825, 14th December 1992.
DOI: 10.1088/0022-3727/25/12/020

Laminated gaskets for absorption and electrical measurements in the diamond anvil cell
Leong D, Feyrit H, Prins AD et al.
Review of Scientific Instruments, Volume 63, issue 12, page 5760, 1st December 1992.
DOI: 10.1063/1.1143359

Well-width dependence of the excitonic lifetime in strained III-V quantum wells
Amand T, Marie X, Dareys B et al.
Journal of Applied Physics, Volume 72, issue 5, page 2077, 1st December 1992.
DOI: 10.1063/1.351642

VALUE OF CONTACT WITH BEIJING
DUNSTAN DJ
PHYSICS WORLD, Volume 5, issue 3, page 21, 1st March 1992.
DOI: 10.1088/2058-7058/5/3/16

Influence of the spin-orbit split-off valence band in InxGa1-xAs/AlyGa1-yAs strained-layer quantum wells
Gil B, Howard LK, Dunstan DJ et al.
Physical Review B, Volume 45, issue 7, page 3906, 1st January 1992.
DOI: 10.1103/PhysRevB.45.3906

Photoreflectance and piezophotoreflectance studies of strained-layer InxGa1-xAs-GaAs quantum wells
Arnaud G, Allègre J, Lefebvre P et al.
Physical Review B, Volume 46, issue 23, page 15290, 1st January 1992.
DOI: 10.1103/PhysRevB.46.15290

1991

Geometrical theory of critical thickness and relaxation in strained-layer growth
Dunstan DJ, Young S, Dixon RH
Journal of Applied Physics, Volume 70, issue 6, page 3038, 1st December 1991.
DOI: 10.1063/1.349335

Optical characterization of thermal mixing in quantum wells and heterostructures using a green's function model
Homewood KP, Dunstan DJ
Journal of Applied Physics, Volume 69, issue 11, page 7581, 1st December 1991.
DOI: 10.1063/1.347526

Plastic relaxation of InGaAs grown on GaAs
Dunstan DJ, Kidd P, Howard LK et al.
Applied Physics Letters, Volume 59, issue 26, page 3390, 1st December 1991.
DOI: 10.1063/1.105684

Relaxed buffer layers
Dunstan DJ
Semiconductor Science and Technology, Volume 6, issue 9 A, 1st December 1991.
DOI: 10.1088/0268-1242/6/9A/013

Soldering diamonds into the diamond anvil cell
Dunstan DJ
Review of Scientific Instruments, Volume 62, issue 6, page 1660, 1st December 1991.
DOI: 10.1063/1.1142453

DOPING IN II-VIS
DUNSTAN DJ, HOMEWOOD KP
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Volume 6, issue 9A, page A162, 1st September 1991.

RELAXED BUFFER LAYERS
DUNSTAN DJ
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Volume 6, issue 9A, page A76, 1st September 1991.
DOI: 10.1088/0268-1242/6/9A/013

Investigation of the band structure of the strained systems InGaAs/GaAs and InGaAs/AIGaAs by high-pressure photoluminescence
Wilkinson VA, Prins AD, Dunstan DJ et al.
Journal of Electronic Materials, Volume 20, issue 8, page 509, 1st August 1991.
DOI: 10.1007/BF02666010

Investigation of the band structure of the strained systems InGaAs/GaAs and InGaAs/AlGaAs by high-pressure photoluminescence
Wilkinson VA, Prins AD, Dunstan DJ et al.
Journal of Electronic Materials, Volume 20, issue 7, page 509, 1st July 1991.
DOI: 10.1007/BF02666010

High-pressure investigation of GaSb and Ga1-xInxSb/GaSb quantum wells
Warburton RJ, Nicholas RJ, Mason NJ et al.
Physical Review B, Volume 43, issue 6, page 4994, 1st January 1991.
DOI: 10.1103/PhysRevB.43.4994

Phase transitions in CdTe/ZnTe strained-layer superlattices
Dunstan DJ, Prins AD, Gil B et al.
Physical Review B, Volume 44, issue 8, page 4017, 1st January 1991.
DOI: 10.1103/PhysRevB.44.4017

STRAINED LAYERS FOR OPTOELECTRONIC DEVICES
ADAMS AR, DUNSTAN DJ, OREILLY EP
PHYSICA SCRIPTA, Volume T39, page 196, 1st January 1991.
DOI: 10.1088/0031-8949/1991/T39/030

1990

Analysis and design of low-dimensional structures and devices using strain: I. Hydrostatic pressure effects
Adams AR, Dunstan DJ
Semiconductor Science and Technology, Volume 5, issue 12, page 1194, 1st December 1990.
DOI: 10.1088/0268-1242/5/12/009

Analysis and design of low-dimensional structures and devices using strain: II. Strained layer systems
Dunstan DJ, Adams AR
Semiconductor Science and Technology, Volume 5, issue 12, page 1202, 1st December 1990.
DOI: 10.1088/0268-1242/5/12/010

Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells
Lambkin JD, Dunstan DJ, Homewood KP et al.
Applied Physics Letters, Volume 57, issue 19, page 1986, 1st December 1990.
DOI: 10.1063/1.103987

INVESTIGATION OF THE BAND-STRUCTURE OF THE STRAINED SYSTEMS INGAAS/GAAS AND INGAAS/ALGAAS BY HIGH-PRESSURE PHOTOLUMINESCENCE
WILKINSON VA, PRINS AD, LAMBKIN JD et al.
JOURNAL OF ELECTRONIC MATERIALS, Volume 19, issue 7, page 24, 1st July 1990.

Cdte/znte strained layer superlattices under high Pressure
Prins AD, Dunstan DJ, Gil B et al.
High Pressure Research, Volume 3, issue 1-6, page 63, 1st April 1990.
DOI: 10.1080/08957959008246030

Magneto-optical studies of cdte/cdmnte semimagnetic semiconductor superlattices under high pressure
Wilkinson VA, Dunstan DJ, Ashenford DE et al.
High Pressure Research, Volume 3, issue 1-6, page 72, 1st April 1990.
DOI: 10.1080/08957959008246033

Miniature cryogenic diamond anvil cell
Dunstan DJ, Wilkinson VA
High Pressure Research, Volume 5, issue 1-6, page 794, 1st April 1990.
DOI: 10.1080/08957959008246261

The pressure dependence of the valence band discontinuity in quantum well structures
Wilkinson VA, Lambkin JD, Prins AD et al.
High Pressure Research, Volume 3, issue 1-6, page 57, 1st April 1990.
DOI: 10.1080/08957959008246028

Hydrostatic pressure coefficients of the photoluminescence of InxGa1-xAs/GaAs strained-layer quantum wells
Wilkinson VA, Prins AD, Lambkin JD et al.
Physical Review B, Volume 42, issue 5, page 3113, 1st January 1990.
DOI: 10.1103/PhysRevB.42.3113

1989

Bulk moduli of GaInAsP and GaInAs by photoluminescence up to 100 kbar
Prins AD, Dunstan DJ
Semiconductor Science and Technology, Volume 4, issue 4, page 239, 1st December 1989.
DOI: 10.1088/0268-1242/4/4/012

Diamond anvil cell high-pressure techniques for semiconductor research
Prins AD, Spain IL, Dunstan DJ
Semiconductor Science and Technology, Volume 4, issue 4, page 237, 1st December 1989.
DOI: 10.1088/0268-1242/4/4/011

Furnace control using non-thermal parameters (semiconductor growth)
Duffill GR, Dunstan DJ
Journal of Physics E: Scientific Instruments, Volume 22, issue 8, page 617, 1st December 1989.
DOI: 10.1088/0022-3735/22/8/016

Hydrostatic pressure dependence of CdTe
Dunstan DJ, Gil B, Priester C et al.
Semiconductor Science and Technology, Volume 4, issue 4, page 241, 1st December 1989.
DOI: 10.1088/0268-1242/4/4/013

Superstrained superlattices: A processing approach
Dunstan DJ, Homewood KP
Journal of Applied Physics, Volume 66, issue 1, page 462, 1st December 1989.
DOI: 10.1063/1.343851

Technology of diamond anvil high-pressure cells: I. Principles, design and construction
Dunstan DJ, Spain IL
Journal of Physics E: Scientific Instruments, Volume 22, issue 11, page 913, 1st December 1989.
DOI: 10.1088/0022-3735/22/11/004

The pressure dependence of methyl tunnelling in MDBP from field-cycling NMR spectroscopy
McDonald PJ, Horsewill AJ, Dunstan DJ et al.
Journal of Physics: Condensed Matter, Volume 1, issue 13, page 2441, 1st December 1989.
DOI: 10.1088/0953-8984/1/13/015

Theory of the gasket in diamond anvil high-pressure cells
Dunstan DJ
Review of Scientific Instruments, Volume 60, issue 12, page 3789, 1st December 1989.
DOI: 10.1063/1.1140442

THE TECHNOLOGY OF DIAMOND ANVIL HIGH-PRESSURE CELLS .2. OPERATION AND USE
SPAIN IL, DUNSTAN DJ
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, Volume 22, issue 11, page 923, 1st November 1989.
DOI: 10.1088/0022-3735/22/11/005

FURNACE CONTROL USING NON-THERMAL PARAMETERS
DUFFILL GR, DUNSTAN DJ
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, Volume 22, issue 8, page 617, 1st August 1989.
DOI: 10.1088/0022-3735/22/8/016

EFFECT OF HIGH-PRESSURE ON THE OPTICAL-TRANSMISSION SPECTRA OF AIIIBIIIC2VI CRYSTALS
PRINS AD, ALLAKHVERDIEV KR, BABAEV SS et al.
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Volume 151, issue 2, page 759, 1st February 1989.
DOI: 10.1002/pssb.2221510237

Pressure dependence of the valence-band discontinuity in GaAs/AlAs and GaAs/AlxGa1-xAs quantum-well structures
Lambkin JD, Adams AR, Dunstan DJ et al.
Physical Review B, Volume 39, issue 8, page 5546, 1st January 1989.
DOI: 10.1103/PhysRevB.39.5546

The pressure dependence of the photoluminescence intensity in hydrogenated amorphous silicon
Wilkinson VA, Dunstan DJ
Philosophical Magazine Letters, Volume 59, issue 1, page 37, 1st January 1989.
DOI: 10.1080/09500838908214774

1988

A portable high-pressure system for low-temperature optical and transport measurements
Lambkin JD, Gunney BJ, Lancefield D et al.
Journal of Physics E: Scientific Instruments, Volume 21, issue 8, page 763, 1st December 1988.
DOI: 10.1088/0022-3735/21/8/006

A simple photoconductive frequency-resolved spectrometer for carrier lifetime determination in semiconductors
Homewood KP, Wade PG, Dunstan DJ
Journal of Physics E: Scientific Instruments, Volume 21, issue 1, page 84, 1st December 1988.
DOI: 10.1088/0022-3735/21/1/015

Miniature cryogenic diamond-anvil high-pressure cell
Dunstan DJ, Scherrer W
Review of Scientific Instruments, Volume 59, issue 4, page 627, 1st December 1988.
DOI: 10.1063/1.1139846

The effect of pressure to 4 GPa on the photoluminescence spectrum of a multiple quantum well P-I-N diode
Prins AD, Lambkin JD, Dunstan DJ et al.
Proceedings of SPIE - The International Society for Optical Engineering, Volume 835, page 95, 10th March 1988.
DOI: 10.1117/12.942334

A determination of the relative bulk moduli of gainasp and inp
Prins AD, Dunstan DJ
Philosophical Magazine Letters, Volume 58, issue 1, page 37, 1st January 1988.
DOI: 10.1080/09500838808214728

Hydrostatic and uniaxial pressure coefficients of CdTe
Dunstan DJ, Gil B, Homewood KP
Physical Review B, Volume 38, issue 11, page 7862, 1st January 1988.
DOI: 10.1103/PhysRevB.38.7862

The hydrostatic pressure dependence of the band-edge photoluminescence of GaInAs
Lambkin JD, Dunstan DJ
Solid State Communications, Volume 67, issue 8, page 827, 1st January 1988.
DOI: 10.1016/0038-1098(88)90032-4

The pressure dependence of the band offsets in a GaInAs/InP multiple quantum well structure
Lambkin JD, Dunstan DJ, O'Reilly EP et al.
Journal of Crystal Growth, Volume 93, issue 1-4, page 323, 1st January 1988.
DOI: 10.1016/0022-0248(88)90547-7

1987

Pulsed noise reduction in infrared luminescence spectroscopy
Dunstan DJ
Journal of Physics E: Scientific Instruments, Volume 20, issue 5, page 577, 1st December 1987.
DOI: 10.1088/0022-3735/20/5/026

INDIUM-PHOSPHIDE AND QUATERNARY DOPING SUPERLATTICES GROWN BY LIQUID-PHASE EPITAXY
GREENE PD, PRINS AD, DUNSTAN DJ et al.
ELECTRONICS LETTERS, Volume 23, issue 7, page 324, 26th March 1987.
DOI: 10.1049/el:19870240

1986

Multi-beam time-resolved spectroscopy in a-Si:H
Merk E, Dunstan DJ, Czaja W
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, Volume 53, issue 1, page 77, 1st January 1986.
DOI: 10.1080/13642818608238973

1985

Bias excitation and recombination kinetics in a-Si:H
Dunstan DJ, Merk E
Journal of Non-Crystalline Solids, Volume 77-78, issue PART 1, page 667, 2nd December 1985.
DOI: 10.1016/0022-3093(85)90746-X

Temperature dependence of carrier lifetimes in a-Si:H
Boulitrop F, Dunstan DJ
Journal of Non-Crystalline Solids, Volume 77-78, issue PART 1, page 663, 2nd December 1985.
DOI: 10.1016/0022-3093(85)90745-8

A theory of band-gap fluctuations in amorphous semiconductors
Roberts M, Dunstan DJ
Journal of Physics C: Solid State Physics, Volume 18, issue 28, page 5429, 10th October 1985.
DOI: 10.1088/0022-3719/18/28/012

ARID TASTES
DUNSTAN D, JACKSON D
NEW SCIENTIST, Volume 108, issue 1481, page 69, 1st January 1985.

Comment on "optical bias control of dispersive relaxations in a-Si: H"
Merk E, Dunstan DJ, Czaja W
Physical Review Letters, Volume 54, issue 3, page 250, 1st January 1985.
DOI: 10.1103/PhysRevLett.54.250

Kinetics of distant-pair recombination iii. Bias illumination and frequency-resolved spectroscopy
Dunstan DJ
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, Volume 52, issue 2, page 111, 1st January 1985.
DOI: 10.1080/01418638508244275

On the preparation dependence of the Staebler-Wronski effect in a-Si:H
Irsigler P, Wagner D, Dunstan DJ
Journal of Non-Crystalline Solids, Volume 69, issue 2-3, page 207, 1st January 1985.
DOI: 10.1016/0022-3093(85)90022-5

1984

FREQUENCY-RESOLVED SPECTROSCOPY AND ITS APPLICATION TO THE ANALYSIS OF RECOMBINATION IN SEMICONDUCTORS
DEPINNA SP, DUNSTAN DJ
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, Volume 50, issue 5, page 579, 1st January 1984.
DOI: 10.1080/13642818408238880

GEMINATE AND DISTANT-PAIR RECOMBINATION IN AMORPHOUS-SILICON - THE METASTABLE EXCITED CARRIER POPULATION
DUNSTAN DJ
SOLID STATE COMMUNICATIONS, Volume 49, issue 4, page 395, 1st January 1984.
DOI: 10.1016/0038-1098(84)90595-7

KINETICS OF DISTANT-PAIR RECOMBINATION .2. TUNNELLING NON-RADIATIVE RECOMBINATION
DUNSTAN DJ
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, Volume 49, issue 2, page 191, 1st January 1984.
DOI: 10.1080/13642818408227638

PHOTOCONDUCTIVITY MEASUREMENTS IN A-SI-H BY FREQUENCY-RESOLVED SPECTROSCOPY
WAGNER D, IRSIGLER P, DUNSTAN DJ
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Volume 17, issue 36, page 6793, 1st January 1984.
DOI: 10.1088/0022-3719/17/36/030

Photoluminescence in hydrogenated amorphous silicon
Dunstan DJ, Boulitrop F
Physical Review B, Volume 30, issue 10, page 5945, 1st January 1984.
DOI: 10.1103/PhysRevB.30.5945

1983

2 BEAM PHOTOLUMINESCENCE IN A-SI-H
BHAT PK, DUNSTAN DJ, AUSTIN IG et al.
JOURNAL OF NON-CRYSTALLINE SOLIDS, Volume 59-6, issue DEC, page 349, 1st January 1983.
DOI: 10.1016/0022-3093(83)90592-6

COMMENT ON NONRADIATIVE-RECOMBINATION KINETICS IN A-SI-H
DUNSTAN DJ
PHYSICAL REVIEW B, Volume 28, issue 4, page 2252, 1st January 1983.
DOI: 10.1103/PhysRevB.28.2252

KINETICS OF DISTANT-PAIR RECOMBINATION - APPLICATION TO AMORPHOUS-SILICON
DUNSTAN DJ
PHYSICA B & C, Volume 117, issue MAR, page 902, 1st January 1983.
DOI: 10.1016/0378-4363(83)90689-7

Luminescence and magnetic resonance in post-hydrogenated microcrystalline silicon
Boulitrop F, Chenevas-Paule A, Dunstan DJ
Solid State Communications, Volume 48, issue 2, page 181, 1st January 1983.
DOI: 10.1016/0038-1098(83)90954-7

NEW EVIDENCE FOR A FLUCTUATING BAND-GAP IN AMORPHOUS-SEMICONDUCTORS
DUNSTAN DJ
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Volume 16, issue 17, page L567, 1st January 1983.
DOI: 10.1088/0022-3719/16/17/004

ON THE APPLICATION OF THE MEYER-NELDEL RULE TO A-SI-H
IRSIGLER P, WAGNER D, DUNSTAN DJ
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Volume 16, issue 34, page 6605, 1st January 1983.
DOI: 10.1088/0022-3719/16/34/010

Phonon interactions in the tail states of a-Si:H
Boulitrop F, Dunstan DJ
Physical Review B, Volume 28, issue 10, page 5923, 1st January 1983.
DOI: 10.1103/PhysRevB.28.5923

THE STAEBLER-WRONSKI EFFECT AND THE MEYER-NELDEL RULE IN AMORPHOUS-SILICON
WAGNER D, IRSIGLER P, DUNSTAN DJ
JOURNAL OF NON-CRYSTALLINE SOLIDS, Volume 59-6, issue DEC, page 413, 1st January 1983.
DOI: 10.1016/0022-3093(83)90608-7

1982

The isoelectronic centre in beryllium-doped silicon. I. Zeeman study
Killoran N, Dunstan DJ, Henry MO et al.
Journal of Physics C: Solid State Physics, Volume 15, issue 29, page 6067, 1st December 1982.
DOI: 10.1088/0022-3719/15/29/018

A DIRECT DETERMINATION OF THE LIFETIME DISTRIBUTION OF THE 1.4 EV LUMINESCENCE OF A-SI-H
DUNSTAN DJ, DEPINNA SP, CAVENETT BC
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Volume 15, issue 13, page L425, 1st January 1982.
DOI: 10.1088/0022-3719/15/13/009

Band-gap fluctuations in amorphous semiconductors
Dunstan DJ
Solid State Communications, Volume 43, issue 5, page 341, 1st January 1982.
DOI: 10.1016/0038-1098(82)90490-2

EVIDENCE FOR A COMMON ORIGIN OF THE URBACH TAILS IN AMORPHOUS AND CRYSTALLINE SEMICONDUCTORS
DUNSTAN DJ
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Volume 15, issue 13, page L419, 1st January 1982.
DOI: 10.1088/0022-3719/15/13/008

KINETICS OF DISTANT-PAIR RECOMBINATION .1. AMORPHOUS-SILICON LUMINESCENCE AT LOW-TEMPERATURE
DUNSTAN DJ
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, Volume 46, issue 6, page 579, 1st January 1982.
DOI: 10.1080/01418638208223545

New model of the temperature dependence of the 1.4-eV emission band of amorphous silicon
Boulitrop F, Dunstan DJ, Chenevas-Paule A
Physical Review B, Volume 25, issue 12, page 7860, 1st January 1982.
DOI: 10.1103/PhysRevB.25.7860

Non-geminate recombination in amorphous silicon
Boulitrop F, Dunstan DJ
Solid State Communications, Volume 44, issue 6, page 841, 1st January 1982.
DOI: 10.1016/0038-1098(82)90286-1

1981

A NO-STOKES SHIFT MODEL FOR THE PHOTO-LUMINESCENCE OF A-SI-H
DUNSTAN DJ, BOULITROP F
JOURNAL DE PHYSIQUE, Volume 42, issue NC4, page 331, 1st January 1981.
DOI: 10.1051/jphyscol:1981470

A re-interpretation of the absorption and excitation spectra of a-Si: H
Dunstan DJ, Boulitrop F
Solid State Communications, Volume 39, issue 9, page 1005, 1st January 1981.
DOI: 10.1016/0038-1098(81)90076-4

BOUND EXCITON RECOMBINATION IN BERYLLIUM-DOPED SILICON
HENRY MO, LIGHTOWLERS EC, KILLORAN N et al.
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Volume 14, issue 10, page L255, 1st January 1981.
DOI: 10.1088/0022-3719/14/10/002

PHOTO-LUMINESCENCE STUDIES OF BAND-BENDING IN HYDROGENATED AMORPHOUS-SILICON THIN-FILMS
DUNSTAN DJ
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Volume 14, issue 9, page 1363, 1st January 1981.
DOI: 10.1088/0022-3719/14/9/020

1980

Zinc vacancy-associated defects and donor-acceptor recombination in ZnSe
Dunstan DJ, Nicholls JE, Cavenett BC et al.
Journal of Physics C: Solid State Physics, Volume 13, issue 34, page 6409, 1st December 1980.
DOI: 10.1088/0022-3719/13/34/011

1979

Spin-dependent donor-acceptor pair recombination in ZnS crystals showing the self-activated emission
Nicholls JE, Davies JJ, Cavenett BC et al.
Journal of Physics C: Solid State Physics, Volume 12, issue 2, page 361, 1st December 1979.
DOI: 10.1088/0022-3719/12/2/023

The behaviour of donor-acceptor recombination emission in II-VI crystals subjected to magnetic resonance
Dunstan DJ, Davies JJ
Journal of Physics C: Solid State Physics, Volume 12, issue 14, page 2927, 1st December 1979.
DOI: 10.1088/0022-3719/12/14/027

1978

BOUND EXCITONS IN CDS
DAWSON P, DUNSTAN DJ, CAVENETT BC
SEMICONDUCTORS AND INSULATORS, Volume 4, issue 1-2, page 91, 1st January 1978.

ORIGIN OF SOME EMISSION BANDS IN ZNSE USING OPTICALLY DETECTED MAGNETIC-RESONANCE
NICHOLLS JE, DUNSTAN DJ, DAVIES JJ
SEMICONDUCTORS AND INSULATORS, Volume 4, issue 1-2, page 119, 1st January 1978.

Optically detected electron spin resonance in amorphous silicon
Morigaki K, Dunstan DJ, Cavenett BC et al.
Solid State Communications, Volume 26, issue 12, page 981, 1st January 1978.
DOI: 10.1016/0038-1098(78)91267-X

1977

Optical detection of the donor resonance in ZnSe [6]
Dunstan DJ, Cavenett BC, Brunwin RF et al.
Journal of Physics C: Solid State Physics, Volume 10, issue 12, 1st December 1977.
DOI: 10.1088/0022-3719/10/12/006

Optically detected magnetic resonance of the V- centre in ZnSe
Dunstan DJ, Nicholls JE, Cavenett BC et al.
Solid State Communications, Volume 24, issue 9, page 677, 1st January 1977.
DOI: 10.1016/0038-1098(77)90389-1

1976

DONOR-ACCEPTOR NATURE OF BLUE SELF-ACTIVATED AND COPPER GREEN EMISSIONS IN ZNS CRYSTALS
JAMES JR, CAVENETT BC, NICHOLLS JE et al.
JOURNAL OF LUMINESCENCE, Volume 12, issue 1, page 447, 1st January 1976.
DOI: 10.1016/0022-2313(76)90121-6

Donor-acceptor nature of the blue self-activated and the copper green emissions in ZnS crystals
James JR, Cavenett BC, Nicholls JE et al.
Journal of Luminescence, Volume 12-13, issue C, page 447, 1st January 1976.
DOI: 10.1016/0022-2313(76)90121-6

 

Material Length Scale of Strain Gradient Plasticity: A Physical Interpretation
DUNSTAN DJ, liu D
International Journal of Plasticity, DOI: 10.1016/j.ijplas.2017.07.007

Measurement of bitumen viscosity in the room-temperature drop experiment: student education, public outreach and modern science in one
Widdicombe AT, Ravindrarajah P, Sapelkin A et al.
Physics Education 49(4), 406 (2014), DOI: 10.1088/0031-9120/49/4/406

The Hall-Petch effect as a manifestation of the general size effect
Li Y, Bushby AJ, Dunstan DJ
Proc Royal Soc A, DOI: 10.1098/rspa.2015.0890

PhD Supervision

This is not an exhaustive list and I would be happy to discuss other project possibilities.