24 January 2017
Venue: GO Jones Room 610
Dr Ivan Isakov
Metal oxide and organic-based thin-film transistors (TFTs) are rapidly becoming the new building blocks in the emerging field of large-area, printable microelectronics. This is primarily due to the fact that the two families combine unique physical properties such as high charge carrier mobility and optical transparency with superior mechanical flexibility. Unlike organics, metal oxides have only recently shown to be compatible with inexpensive and temperature-sensitive substrates such as plastic paving the way to a host of exciting new applications that could well complement those based on their organic counterparts.
In my talk I will discuss recent results in the organic and inorganic TFT research carried out by our group at Imperial College London. Firstly, I will focus on one of the directions towards high performance organic TFTs, that is a film deposition from the blend of a small molecule and a polymer. This blend leads to a remarkable improvement of the small molecule crystallisation and to a hole mobility above 10 cm2/Vs. Secondly, I will describe various routes towards fabrication of the high performance metal oxide TFTs from solution, such as spray pyrolysis and interface engineering of multilayer structures. Both the organic blending and metal oxide multilayer processes allow fabrication of TFTs with exceptional electrical performance, exceeding that of an amorphous silicon and achieving that of a polycrystalline silicon. In the last part of my talk I will describe combination of these technologies into complementary logic circuits based on p-type organic blends and n-type metal oxides.
Imperial College London